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Hirose, Nobumitsu
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1

Sn distribution in Ge/GeSn heterostructures formed by sputt..:

Tsukamoto, Takahiro ; Ikeno, Kento ; Hirose, Nobumitsu...
Journal of Crystal Growth.  604 (2023)  - p. 127045 , 2023
Link: https://doi.org/10.1016/..
 
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2

Increasing the critical thickness of SiGe layers on Si subs..:

Tsukamoto, Takahiro ; Aoyagi, Yosuke ; Nozaki, Shouta...
Journal of Crystal Growth.  600 (2022)  - p. 126900 , 2022
Link: https://doi.org/10.1016/..
 
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3

Direct Growth of Patterned Ge on Insulators Using Graphene:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi..
The Journal of Physical Chemistry C.  125 (2021)  25 - p. 14117-14121 , 2021
Link: https://doi.org/10.1021/..
 
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4

Evaluation of crystallinity of lattice-matched Ge/GeSiSn he..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi..
Thin Solid Films.  726 (2021)  - p. 138646 , 2021
Link: https://doi.org/10.1016/..
 
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5

Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-we..:

Shinkawa, Ayaka ; Wakiya, Minoru ; Maeda, Yuki...
Japanese Journal of Applied Physics.  59 (2020)  8 - p. 080903 , 2020
Link: https://doi.org/10.35848..
 
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6

Increase in Current Density at Metal/GeO2/n-Ge Structure by..:

Tsukamoto, Takahiro ; Kurihara, Shota ; Hirose, Nobumitsu...
Electronic Materials Letters.  16 (2019)  1 - p. 41-46 , 2019
Link: https://doi.org/10.1007/..
 
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7

Effects of Low-Temperature GeSn Buffer Layers on Sn Surface..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi..
Electronic Materials Letters.  16 (2019)  1 - p. 9-13 , 2019
Link: https://doi.org/10.1007/..
 
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8

Formation of GeSn layers on Si (001) substrates at high gro..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Journal of Materials Science.  50 (2015)  12 - p. 4366-4370 , 2015
Link: https://doi.org/10.1007/..
 
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9

Control of surface flatness of Ge layers directly grown on ..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Thin Solid Films.  592 (2015)  - p. 34-38 , 2015
Link: https://doi.org/10.1016/..
 
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10

Investigation of Sn surface segregation during GeSn epitaxi..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Applied Physics Letters.  106 (2015)  5 - p. , 2015
Link: https://doi.org/10.1063/..
 
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11

Effects of boron dopants of Si (001) substrates on formatio..:

Tsukamoto, Takahiro ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Applied Physics Letters.  103 (2013)  17 - p. , 2013
Link: https://doi.org/10.1063/..
 
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12

Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by..:

Hanafusa, Hiroaki ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Japanese Journal of Applied Physics.  51 (2012)  5R - p. 055502 , 2012
Link: https://doi.org/10.1143/..
 
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13

Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by..:

Hanafusa, Hiroaki ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Japanese Journal of Applied Physics.  51 (2012)  5R - p. 055502 , 2012
Link: https://doi.org/10.7567/..
 
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14

Strain Distribution Analysis of Sputter-Formed Strained Si ..:

Hanafusa, Hiroaki ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Applied Physics Express.  4 (2011)  2 - p. 025701 , 2011
Link: https://doi.org/10.1143/..
 
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15

Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diod..:

Hanafusa, Hiroaki ; Hirose, Nobumitsu ; Kasamatsu, Akifumi...
Applied Physics Express.  4 (2011)  2 - p. 024102 , 2011
Link: https://doi.org/10.1143/..
 
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