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Hishiki, Shigeomi
21  results:
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1

High channel mobility of 3C-SiC n-MOSFETs with gate stacks ..:

Yamamoto, Keisuke ; Wang, Dong ; NAKASHIMA, Hiroshi...
Applied Physics Express.  , 2022
Link: https://doi.org/10.35848..
 
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2

Influence of a thick nitride layer on transmission loss in ..:

Bose, Arijit ; Biswas, Debaleen ; Hishiki, Shigeomi...
IEICE Electronics Express.  19 (2022)  4 - p. 20210563-20210563 , 2022
Link: https://doi.org/10.1587/..
 
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3

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for M..:

WAKEJIMA, Akio ; BOSE, Arijit ; BISWAS, Debaleen...
IEICE Transactions on Electronics.  E105.C (2022)  10 - p. 457-465 , 2022
Link: https://doi.org/10.1587/..
 
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4

A Temperature Stable Amplifier Characteristics of AlGaN/GaN..:

Bose, Arijit ; Biswas, Debaleen ; Hishiki, Shigeomi...
IEEE Access.  9 (2021)  - p. 57046-57053 , 2021
Link: https://doi.org/10.1109/..
 
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5

Elimination of the Low Resistivity of Si Substrates in GaN ..:

Bose, Arijit ; Biswas, Debaleen ; Hishiki, Shigeomi...
IEEE Electron Device Letters.  41 (2020)  10 - p. 1480-1483 , 2020
Link: https://doi.org/10.1109/..
 
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6

High interfacial quality metal-oxide-semiconductor capacito..:

Oka, Ryusei ; Yamamoto, Keisuke ; Akamine, Hiroshi...
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGD17 , 2020
Link: https://doi.org/10.35848..
 
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7

Effect of the Schottky Barrier Height on the Detection of M..:

Reshanov, Sergey A. ; Pensl, Gerhard ; Danno, Katsunori...
Materials Science Forum.  600-603 (2008)  - p. 417-420 , 2008
Link: https://doi.org/10.4028/..
 
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8

Reduction of Interface Traps and Enhancement of Channel Mob..:

Hishiki, Shigeomi ; Reshanov, Sergey A. ; Ohshima, Takeshi..
Materials Science Forum.  600-603 (2008)  - p. 703-706 , 2008
Link: https://doi.org/10.4028/..
 
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9

Effects of Fabrication Process on the Electrical Characteri..:

Hishiki, Shigeomi ; Iwamoto, Naoya ; Ohshima, Takeshi...
Materials Science Forum.  600-603 (2008)  - p. 707-710 , 2008
Link: https://doi.org/10.4028/..
 
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10

Averaged Currents Induced by Alpha Particles in an InSb Com..:

Kanno, Ikuo ; Hishiki, Shigeomi ; Kogetsu, Yoshitaka..
Journal of Nuclear Science and Technology.  45 (2008)  sup5 - p. 360-363 , 2008
Link: https://doi.org/10.1080/..
 
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11

Degradation of Charge Collection Efficiency for 6H-SiC Diod..:

Iwamoto, Naoya ; Onoda, Shinobu ; Hishiki, Shigeomi...
Materials Science Forum.  600-603 (2008)  - p. 1043-1046 , 2008
Link: https://doi.org/10.4028/..
 
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12

Transient Response to High Energy Heavy Ions in 6H-SiC n+p ..:

Onoda, Shinobu ; Ohshima, Takeshi ; Hirao, Toshio...
Materials Science Forum.  600-603 (2008)  - p. 1039-1042 , 2008
Link: https://doi.org/10.4028/..
 
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13

Characterization of Mn-doped 3C-SiC prepared by ion implant..:

Takano, Fumiyoshi ; Wang, Wenhong ; Akinaga, Hiro...
Journal of Applied Physics.  101 (2007)  9 - p. , 2007
Link: https://doi.org/10.1063/..
 
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14

Fast response of InSb Schottky detector:

Kanno, Ikuo ; Hishiki, Shigeomi ; Kogetsu, Yoshitaka..
Review of Scientific Instruments.  78 (2007)  5 - p. , 2007
Link: https://doi.org/10.1063/..
 
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15

Degradation of Charge Collection Efficiency Obtained for 6H..:

Ohshima, Takeshi ; Satoh, Takahiro ; Oikawa, Masakazu...
Materials Science Forum.  556-557 (2007)  - p. 913-916 , 2007
Link: https://doi.org/10.4028/..
 
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