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Hishiki, Shigeomi
21
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Online (21)
Mediatypes
Articles (Online) (20)
OpenAccess-fulltext (1)
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1
High channel mobility of 3C-SiC n-MOSFETs with gate stacks ..:
Yamamoto, Keisuke
;
Wang, Dong
;
NAKASHIMA, Hiroshi
...
Applied Physics Express. , 2022
Link:
https://doi.org/10.35848..
?
2
Influence of a thick nitride layer on transmission loss in ..:
Bose, Arijit
;
Biswas, Debaleen
;
Hishiki, Shigeomi
...
IEICE Electronics Express. 19 (2022) 4 - p. 20210563-20210563 , 2022
Link:
https://doi.org/10.1587/..
?
3
AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for M..:
WAKEJIMA, Akio
;
BOSE, Arijit
;
BISWAS, Debaleen
...
IEICE Transactions on Electronics. E105.C (2022) 10 - p. 457-465 , 2022
Link:
https://doi.org/10.1587/..
?
4
A Temperature Stable Amplifier Characteristics of AlGaN/GaN..:
Bose, Arijit
;
Biswas, Debaleen
;
Hishiki, Shigeomi
...
IEEE Access. 9 (2021) - p. 57046-57053 , 2021
Link:
https://doi.org/10.1109/..
?
5
Elimination of the Low Resistivity of Si Substrates in GaN ..:
Bose, Arijit
;
Biswas, Debaleen
;
Hishiki, Shigeomi
...
IEEE Electron Device Letters. 41 (2020) 10 - p. 1480-1483 , 2020
Link:
https://doi.org/10.1109/..
?
6
High interfacial quality metal-oxide-semiconductor capacito..:
Oka, Ryusei
;
Yamamoto, Keisuke
;
Akamine, Hiroshi
...
Japanese Journal of Applied Physics. 59 (2020) SG - p. SGGD17 , 2020
Link:
https://doi.org/10.35848..
?
7
Effect of the Schottky Barrier Height on the Detection of M..:
Reshanov, Sergey A.
;
Pensl, Gerhard
;
Danno, Katsunori
...
Materials Science Forum. 600-603 (2008) - p. 417-420 , 2008
Link:
https://doi.org/10.4028/..
?
8
Reduction of Interface Traps and Enhancement of Channel Mob..:
Hishiki, Shigeomi
;
Reshanov, Sergey A.
;
Ohshima, Takeshi
..
Materials Science Forum. 600-603 (2008) - p. 703-706 , 2008
Link:
https://doi.org/10.4028/..
?
9
Effects of Fabrication Process on the Electrical Characteri..:
Hishiki, Shigeomi
;
Iwamoto, Naoya
;
Ohshima, Takeshi
...
Materials Science Forum. 600-603 (2008) - p. 707-710 , 2008
Link:
https://doi.org/10.4028/..
?
10
Averaged Currents Induced by Alpha Particles in an InSb Com..:
Kanno, Ikuo
;
Hishiki, Shigeomi
;
Kogetsu, Yoshitaka
..
Journal of Nuclear Science and Technology. 45 (2008) sup5 - p. 360-363 , 2008
Link:
https://doi.org/10.1080/..
?
11
Degradation of Charge Collection Efficiency for 6H-SiC Diod..:
Iwamoto, Naoya
;
Onoda, Shinobu
;
Hishiki, Shigeomi
...
Materials Science Forum. 600-603 (2008) - p. 1043-1046 , 2008
Link:
https://doi.org/10.4028/..
?
12
Transient Response to High Energy Heavy Ions in 6H-SiC n+p ..:
Onoda, Shinobu
;
Ohshima, Takeshi
;
Hirao, Toshio
...
Materials Science Forum. 600-603 (2008) - p. 1039-1042 , 2008
Link:
https://doi.org/10.4028/..
?
13
Characterization of Mn-doped 3C-SiC prepared by ion implant..:
Takano, Fumiyoshi
;
Wang, Wenhong
;
Akinaga, Hiro
...
Journal of Applied Physics. 101 (2007) 9 - p. , 2007
Link:
https://doi.org/10.1063/..
?
14
Fast response of InSb Schottky detector:
Kanno, Ikuo
;
Hishiki, Shigeomi
;
Kogetsu, Yoshitaka
..
Review of Scientific Instruments. 78 (2007) 5 - p. , 2007
Link:
https://doi.org/10.1063/..
?
15
Degradation of Charge Collection Efficiency Obtained for 6H..:
Ohshima, Takeshi
;
Satoh, Takahiro
;
Oikawa, Masakazu
...
Materials Science Forum. 556-557 (2007) - p. 913-916 , 2007
Link:
https://doi.org/10.4028/..
1-15