Homewood, David C.T.
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4

Post-annealing effect on the microstructure and photolumine..:

Gao, Y. ; Chong, Y.T. ; Chow, C.F....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  259 (2007)  2 - p. 871-874 , 2007
 
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6

The effect of ion implantation energy and dosage on the mic..:

Chong, Y.T. ; Li, Q. ; Chow, C.F....
Materials Science and Engineering: B.  124-125 (2005)  - p. 444-448 , 2005
 
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8

The optical properties of β-FeSi2 fabricated by ion beam as..:

McKinty, C.N ; Kewell, A.K ; Sharpe, J.S...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  161-163 (2000)  - p. 922-925 , 2000
 
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9

Structural characterisation of ion beam synthesised Ru2Si3:

Sharpe, J.S ; Chen, Y.L ; Gwilliam, R.M...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  161-163 (2000)  - p. 937-940 , 2000
 
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10

Growth and characterization of relaxed epilayers of InGaAs ..:

Dunstan, D.J. ; Dixon, R.H. ; Kidd, P....
Journal of Crystal Growth.  126 (1993)  4 - p. 589-600 , 1993
 
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11

A comparison of shallow and deep iron silicide layers fabri..:

Hunt, T.D. ; Reeson, K.J. ; Gwilliam, R.M....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  80-81 (1993)  - p. 781-785 , 1993
 
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12

A photoluminescence study of indium desorption from straine..:

Emeny, M.T. ; Howard, L.K. ; Homewood, K.P...
Journal of Crystal Growth.  111 (1991)  1-4 - p. 413-418 , 1991
 
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13

Thermal processing of strained GaInAs/GaAs high hole mobili..:

Gillin, W. ; Tang, Y. S. ; Whitehead, N. J....
Applied Physics Letters.  56 (1990)  12 - p. 1116-1118 , 1990
 
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14

ODMR detected via the electroluminescence in p+-i-n+a-Si:H ..:

Homewood, K P ; Cavenett, B C ; Austin, I G...
Journal of Physics C: Solid State Physics.  17 (1984)  3 - p. L103-L106 , 1984
 
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