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Hong, Minghwei
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1

Fabrication and characterization of heavily doped n-type Ga..:

Duan, Juanmei ; Liedke, Maciej O. ; Dawidowski, Wojciech...
Journal of Applied Physics.  134 (2023)  9 - p. , 2023
Link: https://doi.org/10.1063/..
 
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2

Low Dit of $(2-4)\times 10^{10}$ using Y2O3/epi-Si/Ge Gate ..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Wan, Hsien-Wen ; Cheng, Yi-Ting ; Cheng, Chao-Kai... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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3

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/G..:

Chen, Wan-Sin ; Lin, Keng-Yung ; Lin, Yen-Hsun Glen...
ACS Applied Electronic Materials.  5 (2023)  7 - p. 3809-3816 , 2023
Link: https://doi.org/10.1021/..
 
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4

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Kwo, Jueinai..
Nanomaterials.  12 (2022)  8 - p. 1309 , 2022
Link: https://doi.org/10.3390/..
 
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5

In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge — a comparat..:

Chu, Tien-Yu ; Wan, Hsien-Wen ; Cheng, Yi-Ting...
Japanese Journal of Applied Physics.  , 2022
Link: https://doi.org/10.35848..
 
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6

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on..:

Chang, Wen Hsin ; Wan, Hsien-Wen ; Cheng, Yi-Ting...
Japanese Journal of Applied Physics.  61 (2022)  SC - p. SC1024 , 2022
Link: https://doi.org/10.35848..
 
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7

High-Ge-Content Si1–xGex Gate Stacks with Low-Temperature D..:

Wan, Hsien-Wen ; Cheng, Yi-Ting ; Cheng, Chao-Kai...
ACS Applied Electronic Materials.  4 (2022)  6 - p. 2641-2647 , 2022
Link: https://doi.org/10.1021/..
 
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8

Enormous Berry-Curvature-Based Anomalous Hall Effect in Top..:

Zou, Wei-Jhih ; Guo, Meng-Xin ; Wong, Jyun-Fong...
ACS Nano.  16 (2022)  2 - p. 2369-2380 , 2022
Link: https://doi.org/10.1021/..
 
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9

Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxia..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Chu, Tien-Yu...
ACS Applied Electronic Materials.  3 (2021)  10 - p. 4484-4489 , 2021
Link: https://doi.org/10.1021/..
 
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10

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, ..:

Wan, Hsien-Wen ; Hong, Yu-Jie ; Cheng, Yi-Ting...
ACS Applied Electronic Materials.  3 (2021)  5 - p. 2164-2169 , 2021
Link: https://doi.org/10.1021/..
 
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11

Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room te..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Kwo, Jueinai..
Applied Surface Science.  569 (2021)  - p. 150962 , 2021
Link: https://doi.org/10.1016/..
 
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12

Surface electronic structure of Si1−x Ge x (001)-2 × 1: a s..:

Cheng, Yi-Ting ; Wan, Hsien-Wen ; Cheng, Chao-Kai...
Applied Physics Express.  13 (2020)  9 - p. 095503 , 2020
Link: https://doi.org/10.35848..
 
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13

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Cry..:

Hong, Minghwei ; Cheng, Chao-Kai ; Lin, Yen-Hsun...
Nanomaterials.  10 (2020)  8 - p. 1515 , 2020
Link: https://doi.org/10.3390/..
 
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14

Thermal effect in Pt/YIG heterostructure induced by direct ..:

Liu, Yu-Chi ; Wu, Chi-Nan ; Chang, Liang-Juan...
Journal of Physics D: Applied Physics.  53 (2020)  12 - p. 125002 , 2020
Link: https://doi.org/10.1088/..
 
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15

Challenges of Topological Insulator Research: Bi2Te3 Thin F..:

Pereira, Vanda M. ; Wu, Chi-Nan ; Höfer, Katharina...
physica status solidi (b).  258 (2020)  1 - p. , 2020
Link: https://doi.org/10.1002/..
 
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