E-LIB Suche - Ergebnisse für: Hong-Liang Lu

1

Study of a double epi-layers SiC junction barrier Schottky ..:

Qing-Wen, Song ; Yu-Ming, Zhang ; Yi-Men, Zhang..
Chinese Physics B. 19 (2010) 8 - p. 087202 , 2010

Link: https://doi.org/10.1088/..

2

Study of 4H-SiC junction barrier Schottky diode using field..:

Feng-Ping, Chen ; Yu-Ming, Zhang ; Hong-Liang, Lü..
Chinese Physics B. 19 (2010) 9 - p. 097107 , 2010

Link: https://doi.org/10.1088/..

3

Simulation research on offset field-plate used as edge term..:

Feng-Ping, Chen ; Yu-Ming, Zhang ; Yi-Men, Zhang..
Chinese Physics B. 19 (2010) 4 - p. 047305 , 2010

Link: https://doi.org/10.1088/..

4

Analytical model for reverse characteristics of 4H–SiC merg..:

Qing-Wen, Song ; Yu-Ming, Zhang ; Yi-Men, Zhang...
Chinese Physics B. 18 (2009) 12 - p. 5474-5478 , 2009

Link: https://doi.org/10.1088/..

5

Electrothermal simulation of the self-heating effects in 4H..:

Hong-Liang, Lü ; Yi-Men, Zhang ; Yu-Ming, Zhang.
Chinese Physics B. 17 (2008) 4 - p. 1410-1414 , 2008

Link: https://doi.org/10.1088/..

6

Study of (Ga, Mn)N prepared by Mn-ion implantation using op..:

Da-Qing, Xu ; Yi-Men, Zhang ; Yu-Ming, Zhang...
Chinese Physics B. 17 (2008) 12 - p. 4648-4651 , 2008

Link: https://doi.org/10.1088/..

7

Sinusoidal Steady State Analysis on 4H-SiC Buried Channel M..:

Tao, Zhang ; Hong-Liang, Lu ; Yi-Men, Zhang..
Chinese Physics Letters. 25 (2008) 5 - p. 1818-1821 , 2008

Link: https://doi.org/10.1088/..

8

Structural Transition of Gd2O3:Eu Induced by High Pressure:

Hai-Yong, Chen ; Chun-Yuan, He ; Chun-Xiao, Gao...
Chinese Physics Letters. 24 (2007) 1 - p. 158-160 , 2007

Link: https://doi.org/10.1088/..

9

Characterization of Al2O3Thin Films on GaAs Substrate Grown..:

Hong-Liang, Lu ; Yan-Bo, Li ; Min, Xu...
Chinese Physics Letters. 23 (2006) 7 - p. 1929-1931 , 2006

Link: https://doi.org/10.1088/..

10

Effect of Trimethyl Aluminium Surface Pretreatment on Atomi..:

Min, Xu ; Hong-Liang, Lu ; Shi-Jin, Ding...
Chinese Physics Letters. 22 (2005) 9 - p. 2418-2421 , 2005

Link: https://doi.org/10.1088/..

11

Numerical modelling of anisotropy in 4H-SiC MESFET's:

Hong-Liang, Lü ; Yi-Men, Zhang ; Yu-Ming, Zhang
Chinese Physics. 12 (2003) 8 - p. 895-898 , 2003

Link: https://doi.org/10.1088/..

12

Thermal engineering in ALD-grown ZGO thin films for high-pe..:

Ding, Si-Tong ; Chen, Yu-Chang ; Shi, Cai-Yu...
Journal of Materials Science & Technology. 209 (2025) - p. 19-26 , 2025

Link: https://doi.org/10.1016/..

13

Deep polarization of the ensemble nitrogen-vacancy centers ..:

Ding, Si-Tong ; Li, Ziyan ; guo, ji...
Optics Express. , 2024

Link: https://doi.org/10.1364/..

14

Characteristics of tunable aluminum-doped Ga2O3 thin films ..:

Ding, Si-Tong ; Chen, Yu-Chang ; Yu, Qiu-Jun...
Nanotechnology. 35 (2024) 15 - p. 155703 , 2024

Link: https://doi.org/10.1088/..

15

Domain Switching Characteristics in Ga-Doped HfO2 Ferroelec..:

Li, Yu-Chun ; Huang, Teng ; Li, Xiao-Xi...
Nano Letters. 24 (2024) 22 - p. 6585-6591 , 2024

Link: https://doi.org/10.1021/..