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Hosoi, Takuji
192
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Online (191)
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Articles (Online) (167)
OpenAccess-fulltext (24)
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?
1
Density functional theory study on the effect of NO anneali..:
Uemoto, Mitsuharu
;
Funaki, Nahoto
;
Yokota, Kazuma
..
Applied Physics Express. 17 (2024) 1 - p. 011009 , 2024
Link:
https://doi.org/10.35848..
?
2
Controllability of luminescence wavelength from GeSn wires ..:
Shimura, Takayoshi
;
Yamaguchi, Ryoga
;
Tabuchi, Naoto
...
Japanese Journal of Applied Physics. 62 (2023) SC - p. SC1083 , 2023
Link:
https://doi.org/10.35848..
?
3
Fabrication and Luminescence Characterization of Ge Wires w..:
Shimura, Takayoshi
;
Tanaka, Shogo
;
Hosoi, Takuji
.
Journal of Electronic Materials. 52 (2023) 8 - p. 5053-5058 , 2023
Link:
https://doi.org/10.1007/..
?
4
Impact of nitridation on the reliability of 4H-SiC(112̄0) M..:
Nakanuma, Takato
;
Kobayashi, Takuma
;
Hosoi, Takuji
...
Applied Physics Express. 15 (2022) 4 - p. 041002 , 2022
Link:
https://doi.org/10.35848..
?
5
Fixed-charge generation in SiO2/GaN MOS structures by formi..:
Mizobata, Hidetoshi
;
Nozaki, Mikito
;
Kobayashi, Takuma
...
Japanese Journal of Applied Physics. 61 (2022) SC - p. SC1034 , 2022
Link:
https://doi.org/10.35848..
?
6
Comprehensive physical and electrical characterizations of ..:
Nakanuma, Takato
;
Iwakata, Yu
;
Watanabe, Arisa
...
Japanese Journal of Applied Physics. 61 (2022) SC - p. SC1065 , 2022
Link:
https://doi.org/10.35848..
?
7
Impact of post-nitridation annealing in CO2 ambient on thre..:
Hosoi, Takuji
;
Ohsako, Momoe
;
Moges, Kidist
...
Applied Physics Express. 15 (2022) 6 - p. 061003 , 2022
Link:
https://doi.org/10.35848..
?
8
Electrical properties and energy band alignment of SiO2/GaN..:
Mizobata, Hidetoshi
;
Tomigahara, Kazuki
;
Nozaki, Mikito
...
Applied Physics Letters. 121 (2022) 6 - p. , 2022
Link:
https://doi.org/10.1063/..
?
9
Insight into interface electrical properties of metal–oxide..:
Wada, Yuhei
;
Mizobata, Hidetoshi
;
Nozaki, Mikito
...
Applied Physics Letters. 120 (2022) 8 - p. , 2022
Link:
https://doi.org/10.1063/..
?
10
Probing the surface potential of SiO2/4H-SiC(0001) by terah..:
Nakanishi, Hidetoshi
;
Nishimura, Tatsuhiko
;
Kawayama, Iwao
...
Journal of Applied Physics. 130 (2021) 11 - p. , 2021
Link:
https://doi.org/10.1063/..
?
11
High-temperature CO2 treatment for improving electrical cha..:
Hosoi, Takuji
;
Ohsako, Momoe
;
Shimura, Takayoshi
.
Applied Physics Express. 14 (2021) 10 - p. 101001 , 2021
Link:
https://doi.org/10.35848..
?
12
Inhibition of Mg activation in p-type GaN caused by thin Al..:
Wada, Yuhei
;
Mizobata, Hidetoshi
;
Nozaki, Mikito
...
Applied Physics Express. 14 (2021) 7 - p. 071001 , 2021
Link:
https://doi.org/10.35848..
?
13
Backscattering X-ray imaging using Fresnel zone aperture:
Shimura, Takayoshi
;
Hosoi, Takuji
;
Watanabe, Heiji
Applied Physics Express. 14 (2021) 7 - p. 072002 , 2021
Link:
https://doi.org/10.35848..
?
14
Demonstration of 4H-SiC CMOS circuits consisting of well-ba..:
Moges, Kidist
;
Hosoi, Takuji
;
Shimura, Takayoshi
.
Applied Physics Express. 14 (2021) 9 - p. 091006 , 2021
Link:
https://doi.org/10.35848..
?
15
Insight into Channel Conduction Mechanisms of 4H-SiC(0001) ..:
Takeda, Hironori
;
Sometani, Mitsuru
;
Hosoi, Takuji
...
Materials Science Forum. 1004 (2020) - p. 620-626 , 2020
Link:
https://doi.org/10.4028/..
1-15