Houdt, J. Van
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1

Gate Side Injection Operating Mode for 3D NAND Flash Memori..:

, In: 2024 IEEE International Memory Workshop (IMW),
Breuil, L. ; Izmailov, R. ; Popovici, M.... - p. 1-4 , 2024
 
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3

Pulse-Based Capacitive Memory Window with High Non-Destruct..:

, In: 2023 International Electron Devices Meeting (IEDM),
Mukherjee, S. ; Bizindavyi, J. ; Luo, Y-C.... - p. 1-4 , 2023
 
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4

Optimization of Retention in Ferroelectricity Boosted Gate ..:

, In: 2023 IEEE International Memory Workshop (IMW),
Breuil, L. ; Popovici, M. ; Stiers, J.... - p. 1-4 , 2023
 
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5

Variability in Planar FeFETs—Channel Percolation Impact:

Kaczmarek, K. ; Bardon, M. Garcia ; Xiang, Y....
IEEE Transactions on Electron Devices.  70 (2023)  7 - p. 3928-3934 , 2023
 
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6

Impact of Pulse Amplitude on Voltage-Driven Precessional Sw..:

, In: 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers),
Favaro, D. ; Kim, W. ; Monteiro, M. Gama... - p. 1-2 , 2023
 
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7

High performance La-doped HZO based ferroelectric capacitor..:

, In: 2022 International Electron Devices Meeting (IEDM),
Popovici, M.I. ; Bizindavyi, J. ; Favia, P.... - p. 6.4.1-6.4.4 , 2022
 
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8

Modelling ultra-fast threshold voltage instabilities in Hf-..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
O'Sullivan, B. J. ; Truijen, B. ; Putcha, V.... - p. 4A.4-1-4A.4-8 , 2022
 
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9

Trap-polarization interaction during low-field trap charact..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Truijen, B. ; O'Sullivan, B. ; Alam, Md Nur K.... - p. P12-1-P12-4 , 2022
 
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11

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Alam, Md Nur K. ; Higashi, Yusuke ; Truijen, B.... - p. 340-342 , 2022
 
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13

First demonstration of ferroelectric Si:HfO2 based 3D FE-FE..:

, In: 2021 IEEE International Memory Workshop (IMW),
Banerjee, K. ; Breuil, L. ; Milenin, A.P.... - p. 1-4 , 2021
 
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