I agree that this site is using cookies. You can find further informations here.
X
Hsu, Chen-Feng
30917  results:
Search for persons X
?
1

Novel nanocomposite-superlattices for low energy and high s..:

Wu, Xiangjin ; Khan, Asir Intisar ; Lee, Hengyuan...
Nature Communications.  15 (2024)  1 - p. , 2024
Link: https://doi.org/10.1038/..
 
?
2

Contact Optimization Through Annealing and Edge Functionali..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Li, Meng-Zhan ; Hung, Terry Y.T. ; Yun, Wei Sheng... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
?
3

Chalcogenide Selectors for Low Voltage and High Density Mem..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Ambrosi, Elia ; Wu, Cheng-Hsien ; Kuo, Cheng-Chen... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
?
4

High-performance monolayer MoS2 nanosheet GAA transistor:

Chou, Bo-Jhih ; Chung, Yun-Yan ; Yun, Wei-Sheng...
Nanotechnology.  35 (2024)  12 - p. 125204 , 2024
Link: https://doi.org/10.1088/..
 
?
5

Forming-Free Selectors Based on Te in an Insulating SiO x M..:

Datye, Isha M. ; Vaziri, Sam ; Ambrosi, Elia...
IEEE Transactions on Electron Devices.  71 (2024)  1 - p. 530-535 , 2024
Link: https://doi.org/10.1109/..
 
?
6

Status and Performance of Integration Modules Toward Scaled..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chou, Ang-Sheng ; Hsu, Ching-Hao ; Lin, Yu-Tung... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
7

High-Endurance MoS2 FeFET with Operating Voltage Fess Than ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Lee, Tsung-En ; Chiang, Hung-Li ; Chang, Chih-Yu... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
8

Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characte..:

Chang, Teng-Jan ; Chen, Hsing-Yang ; Wang, Chin-I...
Acta Materialia.  246 (2023)  - p. 118707 , 2023
Link: https://doi.org/10.1016/..
 
?
9

Comprehensive Study of Contact Length Scaling Down to 12 nm..:

Wu, Wen-Chia ; Hung, Terry Y. T. ; Sathaiya, D. Mahaveer...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6680-6686 , 2023
Link: https://doi.org/10.1109/..
 
?
10

Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chung, Yun-Yan ; Yun, Wei-Sheng ; Chou, Bo-Jhih... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
11

Complementary carbon nanotube metal–oxide–semiconductor fie..:

Zhang, Zichen ; Passlack, Matthias ; Pitner, Gregory...
Nature Electronics.  6 (2023)  12 - p. 999-1008 , 2023
Link: https://doi.org/10.1038/..
 
?
12

Scaled contact length with low contact resistance in monola..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Wu, Wen-Chia ; Hung, Terry Y.T. ; Sathaiya, D. Mahaveer... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
?
13

Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolyt..:

Zhang, Zichen ; Passlack, Matthias ; Pitner, Gregory...
ACS Applied Materials & Interfaces.  14 (2022)  9 - p. 11873-11882 , 2022
Link: https://doi.org/10.1021/..
 
?
14

Reliable Low Voltage Selector Device Technology Based on Ro..:

Ambrosi, Elia ; Wu, Cheng-Hsien ; Lee, Heng-Yuan...
IEEE Electron Device Letters.  43 (2022)  10 - p. 1673-1676 , 2022
Link: https://doi.org/10.1109/..
 
?
15

First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET wi..:

, In: 2022 International Electron Devices Meeting (IEDM),
Chung, Yun-Yan ; Chou, Bo-Jhih ; Hsu, Chen-Feng... - p. 34.5.1-34.5.4 , 2022
Link: https://doi.org/10.1109/..
 
1-15