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Hu, Qianlan
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1

High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Tr..:

Gu, Chengru ; Hu, Qianlan ; Zhu, Shenwu...
IEEE Electron Device Letters.  44 (2023)  5 - p. 837-840 , 2023
Link: https://doi.org/10.1109/..
 
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2

Capacitorless DRAM Cells Based on High-Performance Indium-T..:

Hu, Qianlan ; Gu, Chengru ; Zhu, Shenwu...
IEEE Electron Device Letters.  44 (2023)  1 - p. 60-63 , 2023
Link: https://doi.org/10.1109/..
 
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3

True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultra..:

Hu, Qianlan ; Gu, Chengru ; Li, Qijun...
Advanced Materials.  35 (2023)  20 - p. , 2023
Link: https://doi.org/10.1002/..
 
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4

Scaling aligned carbon nanotube transistors to a sub-10 nm ..:

Lin, Yanxia ; Cao, Yu ; Ding, Sujuan...
Nature Electronics.  6 (2023)  7 - p. 506-515 , 2023
Link: https://doi.org/10.1038/..
 
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5

First Demonstration of Annealing-Free Top Gate La:HZO-IGZO ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Zeng, Min ; Hu, Qianlan ; Li, Qijun... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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6

First Demonstration of Top-Gate Indium-Tin-Oxide RF Transis..:

, In: 2023 International Electron Devices Meeting (IEDM),
Hu, Qianlan ; Gu, Chengru ; Liu, Shiyuan... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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7

First Demonstration of Sequential Integration for Stacked G..:

, In: 2023 International Electron Devices Meeting (IEDM),
Li, Qijun ; Zhao, Wenjie ; Hu, Qianlan... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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8

Flexible synaptic floating gate devices with dual electrica..:

Xiong, Xiong ; Wang, Xin ; Hu, Qianlan..
iScience.  25 (2022)  3 - p. 103947 , 2022
Link: https://doi.org/10.1016/..
 
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9

High-stability flexible radio frequency transistor and mixe..:

Hu, Qianlan ; Zhu, Shenwu ; Gu, Chengru.
Applied Physics Letters.  121 (2022)  24 - p. , 2022
Link: https://doi.org/10.1063/..
 
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10

A series of isostructural lanthanide metal–organic framewor..:

Hu, Qianlan ; Xu, Tong ; Gu, Jiaming..
CrystEngComm.  24 (2022)  15 - p. 2759-2766 , 2022
Link: https://doi.org/10.1039/..
 
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11

BEOL-Compatible High-Performance a-IGZO Transistors with Re..:

, In: 2022 International Electron Devices Meeting (IEDM),
Li, Qijun ; Gu, Chengru ; Zhu, Shenwu... - p. 2.7.1-2.7.4 , 2022
Link: https://doi.org/10.1109/..
 
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12

Optimized IGZO FETs for Capacitorless DRAM with Retention o..:

, In: 2022 International Electron Devices Meeting (IEDM),
Hu, Qianlan ; Li, Qijun ; Zhu, Shenwu... - p. 26.6.1-26.6.4 , 2022
Link: https://doi.org/10.1109/..
 
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13

Enhancement‐Mode Field‐Effect Transistors and High‐Speed In..:

Lin, Yanxia ; Liang, Shibo ; Xu, Lin...
Advanced Functional Materials.  32 (2021)  11 - p. , 2021
Link: https://doi.org/10.1002/..
 
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14

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/..:

Hu, Qianlan ; Gu, Chengru ; Zhan, Dan..
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 511-516 , 2021
Link: https://doi.org/10.1109/..
 
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15

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Tr..:

Tian, Mengchuan ; Hu, Qianlan ; Gu, Chengru...
ACS Applied Materials & Interfaces.  12 (2020)  15 - p. 17686-17690 , 2020
Link: https://doi.org/10.1021/..
 
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