Hu, Yaoqiao
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2

Mechanism of Fermi Level Pinning for Metal Contacts on Moly..:

Wang, Xinglu ; Hu, Yaoqiao ; Kim, Seong Yeoul..
ACS Applied Materials & Interfaces.  16 (2024)  10 - p. 13258-13266 , 2024
 
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8

Impact of Device Geometry, Physical Doping and Electrostati..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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9

Amorphous Ta2SnO6: A hole-dopable p-type oxide:

Hu, Yaoqiao ; Schlom, Darrell ; Datta, Suman.
Applied Surface Science.  613 (2023)  - p. 155981 , 2023
 
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11

On the Dopant, Defect States, and Mobility in W Doped Amorp..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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12

Ilmenite and amorphous SnTiO3 as p-type oxide semiconductor:

Hu, Yaoqiao ; Schlom, Darrell ; Datta, Suman.
Journal of Materials Chemistry C.  11 (2023)  14 - p. 4830-4836 , 2023
 
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15

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Ato..:

Zhang, Zhuocheng ; Hu, Yaoqiao ; Lin, Zehao...
IEEE Transactions on Electron Devices.  69 (2022)  1 - p. 231-236 , 2022
 
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