Hua, Junting
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3

GaN Power Integration Technology and Its Future Prospects:

Wei, Jin ; Zheng, Zheyang ; Tang, Gaofei...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1365-1382 , 2024
 
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7

Developing an efficient thiophene additive for 18.53% effic..:

Wang, Fei ; Yu, Junting ; Wang, Shaoqiang...
Chemical Engineering Journal.  485 (2024)  - p. 150081 , 2024
 
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8

A new catalytic dehydration strategy by coupling chloride h..:

Fu, Yujing ; Wang, Jinzhao ; Zang, Yaqing...
Chemical Engineering Science.  285 (2024)  - p. 119542 , 2024
 
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9

Vertical Leakage and Back-Gating Characteristics of GaN HEM..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Zheng, Zheyang ; Liao, Hang ; Feng, Sirui... - p. 291-294 , 2024
 
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10

Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryoge..:

Jiang, Zuoheng ; Wang, Xinyu ; Zhao, Junlei...
IEEE Electron Device Letters.  44 (2023)  10 - p. 1612-1615 , 2023
 
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12

Electroluminescence and Gate Carrier Dynamics in a Schottky..:

Feng, Sirui ; Liao, Hang ; Chen, Tao...
IEEE Electron Device Letters.  44 (2023)  10 - p. 1592-1595 , 2023
 
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13

Impacts of $n$-GaN Doping Concentration on Gate Reliability..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Wang, Chengcai ; Chen, Haohao ; Jiang, Zuoheng.. - p. 16-19 , 2023
 
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15

Achieving near-infrared electroluminescence around 780 nm b..:

Yu, Junting ; Yang, Xiaoqin ; Chen, Jun...
Journal of Materials Chemistry C.  11 (2023)  36 - p. 12384-12391 , 2023
 
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