Huang, Huaiying
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1

Highly Scaled BEOL-Compatible Thin Film Transistors With Ul..:

Liang, Yan-Kui ; Zheng, Jun-Yang ; Lin, Yu-Lon...
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3671-3677 , 2024
 
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3

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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4

First Demonstration of Highly Scaled Atomic Layer Deposited..:

, In: 2023 International Electron Devices Meeting (IEDM),
Liang, Yan-Kui ; Zheng, Jun-Yang ; Lin, Yu-Lon... - p. 1-4 , 2023
 
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5

Electrical Characteristics of Ultrathin InZnO Thin-Film Tra..:

Liang, Yan-Kui ; Lin, Jing-Wei ; Peng, Li-Chi...
IEEE Transactions on Electron Devices.  70 (2023)  3 - p. 1067-1072 , 2023
 
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8

Highly Stable Short Channel Ultrathin Atomic Layer Deposite..:

Liang, Yan-Kui ; Li, Wei-Li ; Zheng, Jun-Yang...
IEEE Electron Device Letters.  44 (2023)  10 - p. 1644-1647 , 2023
 
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9

Three-component color-tunable room temperature afterglow do..:

Huang, Huaiying ; Jiang, Yitian ; Liu, Miaochang...
Journal of Materials Chemistry C.  11 (2023)  48 - p. 17044-17049 , 2023
 
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10

Effects of In/Zn composition on the Performance of Ultra-th..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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11

ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimi..:

Liang, Yan-Kui ; Li, Wei-Li ; Wang, Yong-Jyun...
IEEE Electron Device Letters.  43 (2022)  9 - p. 1451-1454 , 2022
 
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14

Current Properties of GaN V-Defect Using Conductive Atomic ..:

Lee, Ling ; Ku, Ching-Shun ; Ke, Wen-Cheng...
Japanese Journal of Applied Physics.  45 (2006)  8L - p. L817 , 2006
 
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15

Photoluminescence Studies of In-Doped GaN:Mg Films:

Chang, Fu-Chin ; Chou, Wu-Chin ; Chen, Wen-Hsiung...
Japanese Journal of Applied Physics.  44 (2005)  10R - p. 7504 , 2005
 
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