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Ikeda, Kazuma
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1

Nonvolatile operation of vertical ferroelectric gate-all-ar..:

Fujisawa, Hironori ; Ikeda, Kazuma ; Nakashima, Seiji
Japanese Journal of Applied Physics.  60 (2021)  SF - p. SFFB10 , 2021
Link: https://doi.org/10.35848..
 
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2

Effects of charge balance and hydrophobicity of the surface..:

Ikeda, Kazuma ; Fujita, Kyoko ; Ohno, Hiroyuki.
Organic & Biomolecular Chemistry.  17 (2019)  31 - p. 7337-7341 , 2019
Link: https://doi.org/10.1039/..
 
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3

Distribution of Cytochromecin LCST-Type Ionic Liquid/Water ..:

Ikeda, Kazuma ; Ikari, Ryunosuke ; Nakamura, Nobuhumi..
Journal of The Electrochemical Society.  165 (2018)  7 - p. G96-G100 , 2018
Link: https://doi.org/10.1149/..
 
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4

Apheresis education and certification for nurses:

Ikeda, Kazuma ; Nollet, Kenneth E. ; Vrielink, Hans.
Transfusion and Apheresis Science.  57 (2018)  5 - p. 635-638 , 2018
Link: https://doi.org/10.1016/..
 
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5

N–H related defect playing the role of acceptor in GaAsN gr..:

Elleuch, Omar ; Wang, Li ; Lee, Kan-Hua...
Journal of Crystal Growth.  468 (2017)  - p. 581-584 , 2017
Link: https://doi.org/10.1016/..
 
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6

Predictors of vasovagal reactions during preoperative autol..:

Nishimori, Hisakazu ; Fujii, Nobuharu ; Fujii, Keiko...
International Journal of Hematology.  105 (2017)  6 - p. 812-818 , 2017
Link: https://doi.org/10.1007/..
 
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7

Double acceptor in p-type GaAsN grown by chemical beam epit..:

Elleuch, Omar ; Wang, Li ; Lee, Kan-Hua...
Journal of Crystal Growth.  432 (2015)  - p. 45-48 , 2015
Link: https://doi.org/10.1016/..
 
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8

Hole traps associated with high-concentration residual carr..:

Elleuch, Omar ; Wang, Li ; Lee, Kan-Hua...
Journal of Applied Physics.  117 (2015)  4 - p. , 2015
Link: https://doi.org/10.1063/..
 
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9

Identification of N–H related acceptor defects in GaAsN gro..:

Elleuch, Omar ; Wang, Li ; Lee, Kan-Hua...
Journal of Alloys and Compounds.  649 (2015)  - p. 815-818 , 2015
Link: https://doi.org/10.1016/..
 
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10

Effects of source gas molecules on N–H- and N–D-related def..:

Ikeda, Kazuma ; Ohshita, Yoshio ; Tanaka, Tomohiro...
Japanese Journal of Applied Physics.  54 (2015)  4 - p. 041001 , 2015
Link: https://doi.org/10.7567/..
 
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11

Wagging and stretching modes of N–H complexes in GaAsN grow..:

Demizu, Koshiro ; Ikeda, Kazuma ; Kojima, Nobuaki..
Japanese Journal of Applied Physics.  53 (2014)  5S1 - p. 05FV02 , 2014
Link: https://doi.org/10.7567/..
 
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12

Correlations between N–H local vibrational modes in GaAsN g..:

Ikeda, Kazuma ; Kojima, Nobuaki ; Ohshita, Yoshio.
Japanese Journal of Applied Physics.  53 (2014)  7 - p. 071001 , 2014
Link: https://doi.org/10.7567/..
 
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13

Analysis of the main acceptor defect in p-type GaAsN grown ..:

Elleuch, Omar ; Bouzazi, Boussairi ; Kowaki, Hiroyuki...
Japanese Journal of Applied Physics.  53 (2014)  9 - p. 091201 , 2014
Link: https://doi.org/10.7567/..
 
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14

N–H related defects in GaAsN grown through chemical beam ep..:

Ohshita, Yoshio ; Ikeda, Kazuma ; Suzuki, Hidetoshi...
Japanese Journal of Applied Physics.  53 (2014)  3 - p. 031001 , 2014
Link: https://doi.org/10.7567/..
 
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15

Erratum: "Effect of Low Growth Rate in Chemical Beam Epitax..:

Honda, Takahiko ; Ikeda, Kazuma ; Inagaki, Makoto...
Japanese Journal of Applied Physics.  52 (2013)  5R - p. 059201 , 2013
Link: https://doi.org/10.7567/..
 
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