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Ikeda, Mitsuhisa
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1

Surface flattening and Ge crystalline segregation of Ag/Ge ..:

Ohta, Akio ; Yamada, Kenzo ; Sugawa, Hibiki...
Japanese Journal of Applied Physics.  60 (2021)  SB - p. SBBK05 , 2021
Link: https://doi.org/10.35848..
 
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2

Crystallization of Ge Thin Films on Sapphire(0001) by Therm..:

Sugawa, Hibiki ; Ohta, Akio ; Kobayashi, Masato...
ECS Transactions.  98 (2020)  5 - p. 505-511 , 2020
Link: https://doi.org/10.1149/..
 
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3

Effect of B-doping on photoluminescence properties of Si qu..:

Makihara, Katsunori ; Fujimori, Shuntaro ; Ikeda, Mitsuhisa..
Materials Science in Semiconductor Processing.  120 (2020)  - p. 105250 , 2020
Link: https://doi.org/10.1016/..
 
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4

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) ..:

Kobayashi, Masato ; Ohta, Akio ; Kurosawa, Masashi...
Japanese Journal of Applied Physics.  59 (2020)  SG - p. SGGK15 , 2020
Link: https://doi.org/10.35848..
 
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5

Complex dielectric function of Si oxide as evaluated from p..:

Ohta, Akio ; Ikeda, Mitsuhisa ; Makihara, Katsunori.
Japanese Journal of Applied Physics.  59 (2020)  SM - p. SMMB04 , 2020
Link: https://doi.org/10.35848..
 
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6

Characterization of photoluminescence from Si quantum dots ..:

Maehara, Takuya ; Fujimori, Shuntaro ; Ikeda, Mitsuhisa...
Materials Science in Semiconductor Processing.  119 (2020)  - p. 105215 , 2020
Link: https://doi.org/10.1016/..
 
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7

Electron Field Emission from Multiply-Stacked Si Quantum Do..:

Niibayashi, Tomofumi ; Takemoto, Tatsuya ; Makihara, Katsunori...
ECS Transactions.  98 (2020)  5 - p. 429-434 , 2020
Link: https://doi.org/10.1149/..
 
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8

Energy band diagram for SiO2/Si system as evaluated from UP..:

Ohta, Akio ; Imagawa, Takuya ; Taoka, Noriyuki...
Japanese Journal of Applied Physics.  60 (2020)  SA - p. SAAC02 , 2020
Link: https://doi.org/10.35848..
 
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9

Characterization of Magnetic-Field Dependent Electron Trans..:

Wu, Jialin ; Zhang, Hai ; Furuhata, Hiroshi...
ECS Transactions.  98 (2020)  5 - p. 493-498 , 2020
Link: https://doi.org/10.1149/..
 
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10

Characterization of Electron Field Emission from Multiple-S..:

FUTAMURA, Yuto ; MAKIHARA, Katsunori ; OHTA, Akio..
IEICE Transactions on Electronics.  E102.C (2019)  6 - p. 458-461 , 2019
Link: https://doi.org/10.1587/..
 
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11

Comparative study of photoluminescence properties obtained ..:

Takada, Noriharu ; Taoka, Noriyuki ; Ohta, Akio...
Japanese Journal of Applied Physics.  58 (2019)  SI - p. SIIB22 , 2019
Link: https://doi.org/10.7567/..
 
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12

Impact of surface pre-treatment on Pt-nanodot formation ind..:

Fujimori, Shuntaro ; Makihara, Katsunori ; Ikeda, Mitsuhisa..
Japanese Journal of Applied Physics.  58 (2019)  SI - p. SIIA15 , 2019
Link: https://doi.org/10.7567/..
 
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13

Impact of remote plasma oxidation of a GaN surface on photo..:

Takada, Noriharu ; Taoka, Noriyuki ; Yamamoto, Taishi...
Japanese Journal of Applied Physics.  58 (2019)  SE - p. SEEC02 , 2019
Link: https://doi.org/10.7567/..
 
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14

Effect of H2-dilution in Si-cap formation on photoluminesce..:

Fujimori, Shuntaro ; Nagai, Ryo ; Ikeda, Mitsuhisa..
Japanese Journal of Applied Physics.  58 (2019)  SI - p. SIIA01 , 2019
Link: https://doi.org/10.7567/..
 
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15

Formation and Characterization of Si Quantum Dots with Ge C..:

, In: 2019 Compound Semiconductor Week (CSW),
Makihara, Katsunori ; Ikeda, Mitsuhisa ; Ohta, Akio. - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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