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Ikejiri, Keitaro
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1

Mass production-ready characteristics of AlGaN/AlN/GaN high..:

Ikejiri, Keitaro ; Hiroyama, Yuichi ; Kasahara, Kenji...
Semiconductor Science and Technology.  36 (2020)  1 - p. 014004 , 2020
Link: https://doi.org/10.1088/..
 
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2

Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates..:

Ishizaka, Fumiya ; Ikejiri, Keitaro ; Tomioka, Katsuhiro.
Japanese Journal of Applied Physics.  52 (2013)  4S - p. 04CH05 , 2013
Link: https://doi.org/10.7567/..
 
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3

Bidirectional Growth of Indium Phosphide Nanowires:

Ikejiri, Keitaro ; Ishizaka, Fumiya ; Tomioka, Katsuhiro.
Nano Letters.  12 (2012)  9 - p. 4770-4774 , 2012
Link: https://doi.org/10.1021/..
 
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4

Influence of growth temperature on growth of InGaAs nanowir..:

Kohashi, Yoshinori ; Sato, Takuya ; Ikejiri, Keitaro...
Journal of Crystal Growth.  338 (2012)  1 - p. 47-51 , 2012
Link: https://doi.org/10.1016/..
 
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5

Selective-area growth of III-V nanowires and their applicat..:

Tomioka, Katsuhiro ; Ikejiri, Keitaro ; Tanaka, Tomotaka...
Journal of Materials Research.  26 (2011)  17 - p. 2127-2141 , 2011
Link: https://doi.org/10.1557/..
 
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6

Correction to Zinc Blende and Wurtzite Crystal Phase Mixing..:

Ikejiri, Keitaro ; Kitauchi, Yusuke ; Tomioka, Katsuhiro..
Nano Letters.  12 (2011)  1 - p. 524-525 , 2011
Link: https://doi.org/10.1021/..
 
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7

Zinc Blende and Wurtzite Crystal Phase Mixing and Transitio..:

Ikejiri, Keitaro ; Kitauchi, Yusuke ; Tomioka, Katsuhiro..
Nano Letters.  11 (2011)  10 - p. 4314-4318 , 2011
Link: https://doi.org/10.1021/..
 
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8

Analysis of twin defects in GaAs nanowires and tetrahedra a..:

Yoshida, Hiroatsu ; Ikejiri, Keitaro ; Sato, Takuya...
Journal of Crystal Growth.  312 (2009)  1 - p. 52-57 , 2009
Link: https://doi.org/10.1016/..
 
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9

Mechanism of catalyst-free growth of GaAs nanowires by sele..:

Ikejiri, Keitaro ; Noborisaka, Jinichiro ; Hara, Shinjiroh..
Journal of Crystal Growth.  298 (2007)  - p. 616-619 , 2007
Link: https://doi.org/10.1016/..
 
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