E-LIB Suche - Ergebnisse für: Illarionov, Yury Y.

1

Dielectric Properties of Ultrathin CaF2 Ionic Crystals:

Wen, Chao ; Banshchikov, Alexander G. ; Illarionov, Yury Y....
Advanced Materials. 33 (2021) 4 - p. , 2021

Link: https://doi.org/10.1002/..

2

Dielectric Properties of Ultrathin CaF2Ionic Crystals:

Wen, Chao ; Banshchikov, Alexander G. ; Illarionov, Yury Y....
Advanced Materials. 32 (2020) 34 - p. 2002525 , 2020

Link: https://doi.org/10.1002/..

3

Modeling the Performance and Reliability of Two-Dimensional..:

, In: 2023 International Electron Devices Meeting (IEDM),

Knobloch, T. ; Waldhoer, D. ; Davoudi, M. R.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

4

Crystalline insulators for scalable 2D nanoelectronics:

Illarionov, Y.Y. ; Knobloch, T. ; Grasser, T.
Solid-State Electronics. 185 (2021) - p. 108043 , 2021

Link: https://doi.org/10.1016/..

5

Electron tunneling in MIS capacitors with the MBE-grown flu..:

Illarionov, Y.Y. ; Vexler, M.I. ; Suturin, S.M....
Microelectronic Engineering. 88 (2011) 7 - p. 1291-1294 , 2011

Link: https://doi.org/10.1016/..

6

Improving stability in two-dimensional transistors with amo..:

Knobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury Yu....
Nature Electronics. 5 (2022) 6 - p. 356-366 , 2022

Link: https://doi.org/10.1038/..

7

Finding Suitable Gate Insulators for Reliable 2D FETs:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),

Knobloch, Theresia ; Illarionov, Yury Yu. ; Grasser, Tibor - p. 1-10 , 2022

Link: https://doi.org/10.1109/..

8

The performance limits of hexagonal boron nitride as an ins..:

Knobloch, Theresia ; Illarionov, Yury Yu. ; Ducry, Fabian...
Nature Electronics. 4 (2021) 2 - p. 98-108 , 2021

Link: https://doi.org/10.1038/..

9

Inorganic molecular crystals for 2D electronics:

Illarionov, Yury Yu. ; Knobloch, Theresia ; Grasser, Tibor
Nature Electronics. 4 (2021) 12 - p. 870-871 , 2021

Link: https://doi.org/10.1038/..

10

Insulators for 2D nanoelectronics: the gap to bridge:

Illarionov, Yury Yu. ; Knobloch, Theresia ; Jech, Markus...
Nature Communications. 11 (2020) 1 - p. , 2020

Link: https://doi.org/10.1038/..

11

Reliability of scalable MoS2 FETs with 2 nm crystalline CaF..:

Illarionov, Yury Yu ; Banshchikov, Alexander G ; Polyushkin, Dmitry K...
2D Materials. 6 (2019) 4 - p. 045004 , 2019

Link: https://doi.org/10.1088/..

12

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With H..:

Oliva, Nicolo ; Illarionov, Yury Yu ; Casu, Emanuele A....
IEEE Journal of the Electron Devices Society. 7 (2019) - p. 1163-1169 , 2019

Link: https://doi.org/10.1109/..

13

The main clinical symptoms in patients with posterior vagin..:

Epifanov, Vitaly A. ; Illarionov, Valery Y. ; Zhumanova, Ekaterina N.
Russian Journal of Physiotherapy, Balneology and Rehabilitation. 17 (2018) 6 - p. 332-338 , 2018

Link: https://doi.org/10.17816..

14

Characterization of Single Defects in Ultrascaled MoS2 Fiel..:

Stampfer, Bernhard ; Zhang, Feng ; Illarionov, Yury Yuryevich...
ACS Nano. 12 (2018) 6 - p. 5368-5375 , 2018

Link: https://doi.org/10.1021/..

15

(Invited) Impact of Gate Dielectrics on the Threshold Volta..:

Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury Yuryevich...
ECS Transactions. 80 (2017) 1 - p. 203-217 , 2017

Link: https://doi.org/10.1149/..