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Illarionov, Yury Yu
135
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Online (135)
Mediatypes
E-Books (1)
Articles (Online) (118)
Bookchapter (Online) (4)
OpenAccess-fulltext (12)
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1
Finding Suitable Gate Insulators for Reliable 2D FETs:
, In:
2022 IEEE International Reliability Physics Symposium (IRPS)
,
Knobloch, Theresia
;
Illarionov, Yury Yu.
;
Grasser, Tibor
- p. 1-10 , 2022
Link:
https://doi.org/10.1109/..
?
2
Improving stability in two-dimensional transistors with amo..:
Knobloch, Theresia
;
Uzlu, Burkay
;
Illarionov, Yury Yu.
...
Nature Electronics. 5 (2022) 6 - p. 356-366 , 2022
Link:
https://doi.org/10.1038/..
?
3
The performance limits of hexagonal boron nitride as an ins..:
Knobloch, Theresia
;
Illarionov, Yury Yu.
;
Ducry, Fabian
...
Nature Electronics. 4 (2021) 2 - p. 98-108 , 2021
Link:
https://doi.org/10.1038/..
?
4
Inorganic molecular crystals for 2D electronics:
Illarionov, Yury Yu.
;
Knobloch, Theresia
;
Grasser, Tibor
Nature Electronics. 4 (2021) 12 - p. 870-871 , 2021
Link:
https://doi.org/10.1038/..
?
5
Insulators for 2D nanoelectronics: the gap to bridge:
Illarionov, Yury Yu.
;
Knobloch, Theresia
;
Jech, Markus
...
Nature Communications. 11 (2020) 1 - p. , 2020
Link:
https://doi.org/10.1038/..
?
6
Reliability of scalable MoS2 FETs with 2 nm crystalline CaF..:
Illarionov, Yury Yu
;
Banshchikov, Alexander G
;
Polyushkin, Dmitry K
...
2D Materials. 6 (2019) 4 - p. 045004 , 2019
Link:
https://doi.org/10.1088/..
?
7
Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With H..:
Oliva, Nicolo
;
Illarionov, Yury Yu
;
Casu, Emanuele A.
...
IEEE Journal of the Electron Devices Society. 7 (2019) - p. 1163-1169 , 2019
Link:
https://doi.org/10.1109/..
?
8
Improved Hysteresis and Reliability of MoS2Transistors With..:
Illarionov, Yury Yu.
;
Smithe, Kirby K. H.
;
Waltl, Michael
...
IEEE Electron Device Letters. 38 (2017) 12 - p. 1763-1766 , 2017
Link:
https://doi.org/10.1109/..
?
9
Energetic mapping of oxide traps in MoS2field-effect transi..:
Illarionov, Yury Yu
;
Knobloch, Theresia
;
Waltl, Michael
...
2D Materials. 4 (2017) 2 - p. 025108 , 2017
Link:
https://doi.org/10.1088/..
?
10
Bias-temperature instability on the back gate of single-lay..:
Illarionov, Yury Yu.
;
Waltl, Michael
;
Smith, Anderson D.
...
Japanese Journal of Applied Physics. 55 (2016) 4S - p. 04EP03 , 2016
Link:
https://doi.org/10.7567/..
?
11
The role of charge trapping in MoS2/SiO2and MoS2/hBN field-..:
Illarionov, Yury Yu
;
Rzepa, Gerhard
;
Waltl, Michael
...
2D Materials. 3 (2016) 3 - p. 035004 , 2016
Link:
https://doi.org/10.1088/..
?
12
An analytical approach for the determination of the lateral..:
Illarionov, Yury Yu.
;
Bina, Markus
;
Tyaginov, Stanislav E.
.
Japanese Journal of Applied Physics. 53 (2014) 4S - p. 04EC22 , 2014
Link:
https://doi.org/10.7567/..
?
13
Variability and Reliability of Graphene Field-Effect Transi..:
Illarionov, Yury Yu
;
Knobloch, Theresia
;
Uzlu, Burkay
...
http://arxiv.org/abs/2309.11233. , 2023
Link:
http://arxiv.org/abs/230..
?
14
Improving stability in two-dimensional transistors with amo..:
Knobloch, Theresia
;
Uzlu, Burkay
;
Illarionov, Yury Yu
...
info:eu-repo/semantics/altIdentifier/doi/10.18154/RWTH-2022-06476. , 2022
Link:
https://publications.rwt..
?
15
Improving stability in two-dimensional transistors with amo..:
Knobloch, Theresia
;
Uzlu, Burkay
;
Illarionov, Yury Yu
...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9236902/. , 2022
Link:
http://www.ncbi.nlm.nih...
1-15