I agree that this site is using cookies. You can find further informations here.
X
Illarionov, Yury Yu.
135  results:
Search for persons X
?
1

Finding Suitable Gate Insulators for Reliable 2D FETs:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Knobloch, Theresia ; Illarionov, Yury Yu. ; Grasser, Tibor - p. 1-10 , 2022
Link: https://doi.org/10.1109/..
 
?
2

Improving stability in two-dimensional transistors with amo..:

Knobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury Yu....
Nature Electronics.  5 (2022)  6 - p. 356-366 , 2022
Link: https://doi.org/10.1038/..
 
?
3

The performance limits of hexagonal boron nitride as an ins..:

Knobloch, Theresia ; Illarionov, Yury Yu. ; Ducry, Fabian...
Nature Electronics.  4 (2021)  2 - p. 98-108 , 2021
Link: https://doi.org/10.1038/..
 
?
4

Inorganic molecular crystals for 2D electronics:

Illarionov, Yury Yu. ; Knobloch, Theresia ; Grasser, Tibor
Nature Electronics.  4 (2021)  12 - p. 870-871 , 2021
Link: https://doi.org/10.1038/..
 
?
5

Insulators for 2D nanoelectronics: the gap to bridge:

Illarionov, Yury Yu. ; Knobloch, Theresia ; Jech, Markus...
Nature Communications.  11 (2020)  1 - p. , 2020
Link: https://doi.org/10.1038/..
 
?
6

Reliability of scalable MoS2 FETs with 2 nm crystalline CaF..:

Illarionov, Yury Yu ; Banshchikov, Alexander G ; Polyushkin, Dmitry K...
2D Materials.  6 (2019)  4 - p. 045004 , 2019
Link: https://doi.org/10.1088/..
 
?
7

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With H..:

Oliva, Nicolo ; Illarionov, Yury Yu ; Casu, Emanuele A....
IEEE Journal of the Electron Devices Society.  7 (2019)  - p. 1163-1169 , 2019
Link: https://doi.org/10.1109/..
 
?
8

Improved Hysteresis and Reliability of MoS2Transistors With..:

Illarionov, Yury Yu. ; Smithe, Kirby K. H. ; Waltl, Michael...
IEEE Electron Device Letters.  38 (2017)  12 - p. 1763-1766 , 2017
Link: https://doi.org/10.1109/..
 
?
9

Energetic mapping of oxide traps in MoS2field-effect transi..:

Illarionov, Yury Yu ; Knobloch, Theresia ; Waltl, Michael...
2D Materials.  4 (2017)  2 - p. 025108 , 2017
Link: https://doi.org/10.1088/..
 
?
10

Bias-temperature instability on the back gate of single-lay..:

Illarionov, Yury Yu. ; Waltl, Michael ; Smith, Anderson D....
Japanese Journal of Applied Physics.  55 (2016)  4S - p. 04EP03 , 2016
Link: https://doi.org/10.7567/..
 
?
11

The role of charge trapping in MoS2/SiO2and MoS2/hBN field-..:

Illarionov, Yury Yu ; Rzepa, Gerhard ; Waltl, Michael...
2D Materials.  3 (2016)  3 - p. 035004 , 2016
Link: https://doi.org/10.1088/..
 
?
12

An analytical approach for the determination of the lateral..:

Illarionov, Yury Yu. ; Bina, Markus ; Tyaginov, Stanislav E..
Japanese Journal of Applied Physics.  53 (2014)  4S - p. 04EC22 , 2014
Link: https://doi.org/10.7567/..
 
?
13

Variability and Reliability of Graphene Field-Effect Transi..:

Illarionov, Yury Yu ; Knobloch, Theresia ; Uzlu, Burkay...
http://arxiv.org/abs/2309.11233.  , 2023
Link: http://arxiv.org/abs/230..
 
?
14

Improving stability in two-dimensional transistors with amo..:

Knobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury Yu...
info:eu-repo/semantics/altIdentifier/doi/10.18154/RWTH-2022-06476.  , 2022
Link: https://publications.rwt..
 
?
15

Improving stability in two-dimensional transistors with amo..:

Knobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury Yu...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9236902/.  , 2022
Link: http://www.ncbi.nlm.nih...
 
1-15