E-LIB Suche - Ergebnisse für: Ionica, I.

1

Low Temperature Junction Formation for EZ-FET:

Zerhouni Abdou, N. ; Acosta Alba, P. ; Brunet, L....
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 384-389 , 2024

Link: https://doi.org/10.1109/..

2

Methodology for parameters extraction with undoped junction..:

Zerhouni Abdou, N. ; Reboh, S. ; Brunet, L....
Solid-State Electronics. 217 (2024) - p. 108897 , 2024

Link: https://doi.org/10.1016/..

3

Calibration of second harmonic generation technique to prob..:

Obeid, B. ; Bastard, L. ; Bouchard, A....
Journal of Applied Physics. 135 (2024) 9 - p. , 2024

Link: https://doi.org/10.1063/..

4

Second harmonic generation in centrosymmetric multilayered ..:

Obeid, B. ; Ionica, I. ; Vitrant, G...
Journal of Applied Physics. 134 (2023) 8 - p. , 2023

Link: https://doi.org/10.1063/..

5

EZ-FET junctions activation by nanosecond laser annealing:

, In: 2023 21st International Workshop on Junction Technology (IWJT),

Abdou, N. Zerhouni ; Acosta-Alba, P. ; Brunet, L.... - p. 1-4 , 2023

Link: https://doi.org/10.23919..

6

Undoped junctionless EZ-FET: Model and measurements:

Zerhouni Abdou, N. ; Reboh, S. ; Alepidis, M....
Solid-State Electronics. 208 (2023) - p. 108731 , 2023

Link: https://doi.org/10.1016/..

7

3D sequential integration: applications and associated key ..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),

Batude, P. ; Billoint, O. ; Thuries, S.... - p. 3.2.1-3.2.4 , 2021

Link: https://doi.org/10.1109/..

8

A simple test structure for the electrical characterization..:

Alepidis, M. ; Ionica, I. ; Milesi, F....
Solid-State Electronics. 185 (2021) - p. 108047 , 2021

Link: https://doi.org/10.1016/..

9

Pseudo-MOSFET response to transient ramp signal applied to ..:

, In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),

Alepidis, M. ; Bawedin, M. ; Ionica, I. - p. 1-4 , 2019

Link: https://doi.org/10.1109/..

10

Impact of contact and channel resistance on the frequency-d..:

Sato, S. ; Ghibaudo, G. ; Benea, L....
Solid-State Electronics. 159 (2019) - p. 197-203 , 2019

Link: https://doi.org/10.1016/..

11

Field-effect passivation of Si by ALD-Al2O3: Second harmoni..:

Damianos, D. ; Vitrant, G. ; Kaminski-Cachopo, A....
Journal of Applied Physics. 124 (2018) 12 - p. , 2018

Link: https://doi.org/10.1063/..

12

Second Harmonic Generation characterization of SOI wafers: ..:

Damianos, D. ; Vitrant, G. ; Lei, M....
Solid-State Electronics. 143 (2018) - p. 90-96 , 2018

Link: https://doi.org/10.1016/..

13

Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabric..:

Park, H.J. ; Pirro, L. ; Czornomaz, L....
Solid-State Electronics. 128 (2017) - p. 80-86 , 2017

Link: https://doi.org/10.1016/..

14

Low-frequency noise in bare SOI wafers: Experiments and mod..:

Pirro, L. ; Ionica, I. ; Cristoloveanu, S..
Solid-State Electronics. 125 (2016) - p. 167-174 , 2016

Link: https://doi.org/10.1016/..

15

Interface trap density evaluation on bare silicon-on-insula..:

Pirro, L. ; Ionica, I. ; Ghibaudo, G....
Journal of Applied Physics. 119 (2016) 17 - p. , 2016

Link: https://doi.org/10.1063/..