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Irikura, Kenta
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1

Anticorrosive Behavior of Aluminum Nitride Surface Exposed ..:

Haruguchi, Miyu ; Hayashi, Masaya ; Irikura, Kenta..
ECS Journal of Solid State Science and Technology.  10 (2021)  3 - p. 034006 , 2021
Link: https://doi.org/10.1149/..
 
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2

Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Ca..:

Kawasaki, Ryohei ; Irikura, Kenta ; Habuka, Hitoshi..
Materials Science Forum.  1004 (2020)  - p. 167-172 , 2020
Link: https://doi.org/10.4028/..
 
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3

Quartz crystal microbalance for real-time monitoring chloro..:

Takahashi, Toshinori ; Otani, Mana ; Muroi, Mitsuko...
Materials Science in Semiconductor Processing.  106 (2020)  - p. 104759 , 2020
Link: https://doi.org/10.1016/..
 
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4

Etching Rate Profile of C-Face 4H-SiC Wafer Depending on To..:

Irikura, Kenta ; Kawasaki, Ryohei ; Habuka, Hitoshi..
Materials Science Forum.  1004 (2020)  - p. 173-179 , 2020
Link: https://doi.org/10.4028/..
 
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5

Chlorine Trifluoride Gas Distributor Design for Single-Crys..:

Kurashima, Keisuke ; Kawasaki, Ryohei ; Irikura, Kenta...
Materials Science Forum.  963 (2019)  - p. 520-524 , 2019
Link: https://doi.org/10.4028/..
 
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6

Advantages of a slim vertical gas channel at high SiHCl3 co..:

Irikura, Kenta ; Muroi, Mitsuko ; Yamada, Ayami...
Materials Science in Semiconductor Processing.  87 (2018)  - p. 13-18 , 2018
Link: https://doi.org/10.1016/..
 
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