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Irokawa, Y.
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1

Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/Ga..:

Irokawa, Y.
ECS Electrochemistry Letters.  3 (2014)  11 - p. B17-B19 , 2014
Link: https://doi.org/10.1149/..
 
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2

Hydrogen interaction with GaN metal–insulator–semiconductor..:

Irokawa, Y.
Physica B: Condensed Matter.  407 (2012)  15 - p. 2957-2959 , 2012
Link: https://doi.org/10.1016/..
 
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3

Effect of Carbon Impurity Incorporation on Band-Gap States ..:

Nakano, Y. ; Irokawa, Y. ; Sumida, Y...
Electrochemical and Solid-State Letters.  15 (2011)  2 - p. H44-H46 , 2011
Link: https://doi.org/10.1149/..
 
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4

Characterization of Al In GaN/GaN Heterointerface by HAADF-..:

Takeguchi, M ; Okuno, H ; Irokawa, Y..
Microscopy and Microanalysis.  14 (2008)  S2 - p. 438-439 , 2008
Link: https://doi.org/10.1017/..
 
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5

Implantation temperature dependence of Si activation in AlG..:

Irokawa, Y. ; Ishiguro, O. ; Kachi, T...
Applied Physics Letters.  88 (2006)  18 - p. , 2006
Link: https://doi.org/10.1063/..
 
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6

Si[sup +] Ion Implantation into GaN at Cryogenic Temperatur..:

Irokawa, Y. ; Fujishima, O. ; Kachi, T...
Electrochemical and Solid-State Letters.  8 (2005)  4 - p. G95 , 2005
Link: https://doi.org/10.1149/..
 
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7

Electrical activation characteristics of silicon-implanted ..:

Irokawa, Y. ; Fujishima, O. ; Kachi, T..
Journal of Applied Physics.  97 (2005)  8 - p. , 2005
Link: https://doi.org/10.1063/..
 
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8

Design and Fabrication of GaN High Power Rectifiers:

, In: Optoelectronic Devices: III Nitrides,
Baik, K.H. ; Ren, F. ; Irokawa, Y.... - p. 323-350 , 2005
Link: https://doi.org/10.1016/..
 
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9

Activation characteristics of ion-implanted Si+ in AlGaN:

Irokawa, Y. ; Fujishima, O. ; Kachi, T...
Applied Physics Letters.  86 (2005)  19 - p. , 2005
Link: https://doi.org/10.1063/..
 
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10

Electrical characteristics of GaN implanted with Si+ at ele..:

Irokawa, Y. ; Fujishima, O. ; Kachi, T...
Applied Physics Letters.  86 (2005)  11 - p. , 2005
Link: https://doi.org/10.1063/..
 
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11

Reduction of Surface-Induced Current Collapse in AlGaN/GaN ..:

Irokawa, Y. ; Luo, B. ; Ren, F....
Electrochemical and Solid-State Letters.  7 (2004)  9 - p. G188 , 2004
Link: https://doi.org/10.1149/..
 
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12

MgO/p-GaN enhancement mode metal-oxide semiconductor field-..:

Irokawa, Y. ; Nakano, Y. ; Ishiko, M....
Applied Physics Letters.  84 (2004)  15 - p. 2919-2921 , 2004
Link: https://doi.org/10.1063/..
 
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13

Si+ ion implanted MPS bulk GaN diodes:

Irokawa, Y. ; Kim, J. ; Ren, F....
Solid-State Electronics.  48 (2004)  5 - p. 827-830 , 2004
Link: https://doi.org/10.1016/..
 
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14

Comparison of Interface State Density Characterization Meth..:

LaRoche, J. R. ; Kim, J. ; Johnson, J. W....
Electrochemical and Solid-State Letters.  7 (2004)  2 - p. G21 , 2004
Link: https://doi.org/10.1149/..
 
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15

2.6 A, 0.69 MW cm−2 single-chip bulk GaN p-i-n rectifier:

Irokawa, Y. ; Luo, B. ; Kang, B.S....
Solid-State Electronics.  48 (2004)  2 - p. 359-361 , 2004
Link: https://doi.org/10.1016/..
 
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