I agree that this site is using cookies. You can find further informations
here
.
X
Login
My folder (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
Show Desktop-Version
Toggle navigation
Ishihara, Seiya
37
results:
Search for persons
X
Format
Online (37)
Mediatypes
Articles (Online) (27)
Bookchapter (Online) (2)
OpenAccess-fulltext (8)
Sorted by: Relevance
Sorted by: Year
?
1
Investigation on Mo1−x W x S2 fabricated by co-sputtering a..:
Hibino, Yusuke
;
Ishihara, Seiya
;
Sawamoto, Naomi
...
Japanese Journal of Applied Physics. 57 (2018) 6S1 - p. 06HB04 , 2018
Link:
https://doi.org/10.7567/..
?
2
Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulf..:
Matsuura, Kentaro
;
Ohashi, Takumi
;
Muneta, Iriya
...
Journal of Electronic Materials. 47 (2018) 7 - p. 3497-3501 , 2018
Link:
https://doi.org/10.1007/..
?
3
Sputter-Deposited-MoS2${n}$ MISFETs With Top-Gate and Al2O3..:
Matsuura, Kentaro
;
Wakabayashi, Hitoshi
;
Shimizu, Jun'Ichi
...
IEEE Journal of the Electron Devices Society. 6 (2018) - p. 1246-1252 , 2018
Link:
https://doi.org/10.1109/..
?
4
Suppression of Sulfur Desorption of High-Temperature Sputte..:
Hibino, Yusuke
;
Ishihara, Seiya
;
Oyanagi, Yuya
...
ECS Transactions. 85 (2018) 13 - p. 531-539 , 2018
Link:
https://doi.org/10.1149/..
?
5
Quantitative relationship between sputter-deposited-MoS2 pr..:
Ohashi, Takumi
;
Muneta, Iriya
;
Matsuura, Kentaro
...
Applied Physics Express. 10 (2017) 4 - p. 041202 , 2017
Link:
https://doi.org/10.7567/..
?
6
Pattern-dependent anisotropic stress evaluation in SiGe epi..:
Yamamoto, Shotaro
;
Kosemura, Daisuke
;
Takeuchi, Kazuma
...
Japanese Journal of Applied Physics. 56 (2017) 5 - p. 051301 , 2017
Link:
https://doi.org/10.7567/..
?
7
Local anisotropic strain evaluation in thin Ge epitaxial fi..:
Takeuchi, Kazuma
;
Yokogawa, Ryo
;
Ishihara, Seiya
...
Japanese Journal of Applied Physics. 56 (2017) 11 - p. 110313 , 2017
Link:
https://doi.org/10.7567/..
?
8
Band gap-tuned MoS2(1−x)Te2x thin films synthesized by a hy..:
Hibino, Yusuke
;
Ishihara, Seiya
;
Sawamoto, Naomi
...
Journal of Materials Research. 32 (2017) 16 - p. 3021-3028 , 2017
Link:
https://doi.org/10.1557/..
?
9
Improving crystalline quality of sputtering-deposited MoS2 ..:
Ishihara, Seiya
;
Hibino, Yusuke
;
Sawamoto, Naomi
...
Japanese Journal of Applied Physics. 55 (2016) 4S - p. 04EJ07 , 2016
Link:
https://doi.org/10.7567/..
?
10
Large Scale Uniformity of Sputtering Deposited Single- and ..:
Ishihara, Seiya
;
Hibino, Yusuke
;
Sawamoto, Naomi
...
ECS Journal of Solid State Science and Technology. 5 (2016) 11 - p. Q3012-Q3015 , 2016
Link:
https://doi.org/10.1149/..
?
11
Properties of single-layer MoS2 film fabricated by combinat..:
Ishihara, Seiya
;
Hibino, Yusuke
;
Sawamoto, Naomi
...
Japanese Journal of Applied Physics. 55 (2016) 6S1 - p. 06GF01 , 2016
Link:
https://doi.org/10.7567/..
?
12
Multi-layered MoS2 film formed by high-temperature sputteri..:
Ohashi, Takumi
;
Suda, Kohei
;
Ishihara, Seiya
...
Japanese Journal of Applied Physics. 54 (2015) 4S - p. 04DN08 , 2015
Link:
https://doi.org/10.7567/..
?
13
Growth of Ge Homoepitaxial Films by Metal-Organic Chemical ..:
Suda, Kohei
;
Kijima, Takahiro
;
Ishihara, Seiya
...
ECS Journal of Solid State Science and Technology. 4 (2015) 5 - p. P152-P154 , 2015
Link:
https://doi.org/10.1149/..
?
14
Ge homoepitaxial growth by metal–organic chemical vapor dep..:
Suda, Kohei
;
Ishihara, Seiya
;
Sawamoto, Naomi
...
Japanese Journal of Applied Physics. 53 (2014) 11 - p. 110301 , 2014
Link:
https://doi.org/10.7567/..
?
15
Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD:
Suda, Kohei
;
Ishihara, Seiya
;
Sawamoto, Naomi
...
ECS Transactions. 64 (2014) 6 - p. 697-701 , 2014
Link:
https://doi.org/10.1149/..
1-15