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Ishiwara, Hiroshi
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1

Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate..:

, In: Topics in Applied Physics; Ferroelectric-Gate Field Effect Transistor Memories,
Yoon, Sung-Min ; Ishiwara, Hiroshi - p. 375-398 , 2020
Link: https://doi.org/10.1007/..
 
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2

Ferroelectric-Gate Field Effect Transistor Memories: Device.. 

Topics in Applied Physics, 131
Park, Byung-Eun ; Ishiwara, Hiroshi ; Okuyama, Masanori.. - 2nd ed. 2020 . , 2020
Link: https://doi.org/10.1007/..
 
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3

Experimental demonstration of a ferroelectric FET using pap..:

Shin, Changhwan ; Lee, Gwang-Geun ; Han, Dae-Hee...
IEICE Electronics Express.  11 (2014)  14 - p. 20140447-20140447 , 2014
Link: https://doi.org/10.1587/..
 
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4

Bi2SiO5 Doping Concentration Effects on the Electrical Prop..:

Li, Ming ; Zhang, Yang ; Shao, Yayun...
Journal of Electronic Materials.  43 (2014)  9 - p. 3625-3629 , 2014
Link: https://doi.org/10.1007/..
 
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5

Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation..:

Ohmi, Shun-ichiro ; Kamino, Kousuke ; Ishiwara, Hiroshi
Japanese Journal of Applied Physics.  52 (2013)  4S - p. 04CK11 , 2013
Link: https://doi.org/10.7567/..
 
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6

Impurity substitution effects in BiFeO3 thin films—From a v..:

Ishiwara, Hiroshi
Current Applied Physics.  12 (2012)  3 - p. 603-611 , 2012
Link: https://doi.org/10.1016/..
 
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7

Room-Temperature Fabrication of HfON Gate Insulator for Low..:

Liao, Min ; Ishiwara, Hiroshi ; Ohmi, Shun-ichiro
Japanese Journal of Applied Physics.  51 (2012)  4S - p. 04DK01 , 2012
Link: https://doi.org/10.7567/..
 
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8

Effect of anIn-situProcess on Electrical Properties of n-Ty..:

Song, Younguk ; Ishiwara, Hiroshi ; Ohmi, Shun-ichiro
Applied Physics Express.  5 (2012)  3 - p. 031601 , 2012
Link: https://doi.org/10.1143/..
 
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9

Drain Current Characteristics of Ferroelectric Gate-All-Aro..:

Ibata, Masakazu ; Ohmi, Shun-ichiro ; Ishiwara, Hiroshi
Japanese Journal of Applied Physics.  51 (2012)  3R - p. 034301 , 2012
Link: https://doi.org/10.1143/..
 
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10

Room-Temperature Fabrication of HfON Gate Insulator for Low..:

Liao, Min ; Ishiwara, Hiroshi ; Ohmi, Shun-ichiro
Japanese Journal of Applied Physics.  51 (2012)  4S - p. 04DK01 , 2012
Link: https://doi.org/10.1143/..
 
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11

Drain Current Characteristics of Ferroelectric Gate-All-Aro..:

Ibata, Masakazu ; Ohmi, Shun-ichiro ; Ishiwara, Hiroshi
Japanese Journal of Applied Physics.  51 (2012)  3R - p. 034301 , 2012
Link: https://doi.org/10.7567/..
 
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12

Growth Mechanism of Pentacene on HfON Gate Insulator and It..:

LIAO, Min ; ISHIWARA, Hiroshi ; OHMI, Shun-ichiro
IEICE Transactions on Electronics.  E95.C (2012)  5 - p. 885-890 , 2012
Link: https://doi.org/10.1587/..
 
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13

Approximate Analysis of Cylindrical Ferroelectric Capacitor..:

Ibata, Masakazu ; Ishiwara, Hiroshi
Japanese Journal of Applied Physics.  50 (2011)  5R - p. 051503 , 2011
Link: https://doi.org/10.7567/..
 
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14

Thickness-dependent ferroelectric properties of Mn-doped Bi..:

Kim, Jeong Hwan ; Funakubo, Hiroshi ; Sugiyama, Yoshihiro.
Current Applied Physics.  11 (2011)  3 - p. S228-S231 , 2011
Link: https://doi.org/10.1016/..
 
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15

High Fatigue Endurance and Large Remanent Polarization in P..:

Kim, Jeong Hwan ; Funakubo, Hiroshi ; Ishiwara, Hiroshi
Applied Physics Express.  4 (2011)  8 - p. 081501 , 2011
Link: https://doi.org/10.1143/..
 
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