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Iwinska, M.
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1

Role of carbon in n-type bulk GaN crystals:

Amilusik, M. ; Zajac, M. ; Fijalkowski, M....
Journal of Crystal Growth.  632 (2024)  - p. 127641 , 2024
Link: https://doi.org/10.1016/..
 
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2

Electrical transport properties of highly doped N-type GaN ..:

Konczewicz, L ; Litwin-Staszewska, E ; Zajac, M...
Semiconductor Science and Technology.  37 (2022)  5 - p. 055012 , 2022
Link: https://doi.org/10.1088/..
 
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3

The effect of annealing on photoluminescence from defects i..:

Reshchikov, M. A. ; Demchenko, D. O. ; Ye, D....
Journal of Applied Physics.  131 (2022)  3 - p. , 2022
Link: https://doi.org/10.1063/..
 
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4

Defect-related photoluminescence from ammono GaN:

Reshchikov, M. A. ; Vorobiov, M. ; Grabianska, K....
Journal of Applied Physics.  129 (2021)  9 - p. , 2021
Link: https://doi.org/10.1063/..
 
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5

p-type conductivity in GaN:Zn monocrystals grown by ammonot..:

Zajac, M. ; Konczewicz, L. ; Litwin-Staszewska, E....
Journal of Applied Physics.  129 (2021)  13 - p. , 2021
Link: https://doi.org/10.1063/..
 
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6

Study of spectral and recombination characteristics of HVPE..:

Gaubas, E. ; Baronas, P. ; Čeponis, T....
Materials Science in Semiconductor Processing.  91 (2019)  - p. 341-355 , 2019
Link: https://doi.org/10.1016/..
 
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7

Incorporation of Carbon in Free-Standing HVPE-Grown GaN Sub..:

Zvanut, M. E. ; Paudel, Subash ; Glaser, E. R....
Journal of Electronic Materials.  48 (2019)  4 - p. 2226-2232 , 2019
Link: https://doi.org/10.1007/..
 
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8

Homoepitaxial growth by halide vapor phase epitaxy of semi-..:

Amilusik, M. ; Sochacki, T. ; Fijalkowski, M....
Japanese Journal of Applied Physics.  58 (2019)  SC - p. SC1030 , 2019
Link: https://doi.org/10.7567/..
 
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9

Doping in bulk HVPE-GaN grown on native seeds – highly cond..:

Bockowski, M. ; Iwinska, M. ; Amilusik, M....
Journal of Crystal Growth.  499 (2018)  - p. 1-7 , 2018
Link: https://doi.org/10.1016/..
 
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10

Charge transfer process for carbon-related center in semi-i..:

Zvanut, M. E. ; Paudel, Subash ; Sunay, U. R....
Journal of Applied Physics.  124 (2018)  7 - p. , 2018
Link: https://doi.org/10.1063/..
 
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11

Crystallization of semi-insulating HVPE-GaN with solid iron..:

Iwinska, M. ; Piotrzkowski, R. ; Litwin-Staszewska, E....
Journal of Crystal Growth.  475 (2017)  - p. 121-126 , 2017
Link: https://doi.org/10.1016/..
 
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12

(Invited) Growth and Characterization of Bulk HVPE-GaN – Pa..:

Bockowski, Michal ; Iwinska, M ; Amilusik, M...
ECS Transactions.  80 (2017)  10 - p. 991-1003 , 2017
Link: https://doi.org/10.1149/..
 
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13

Crystal growth of HVPE-GaN doped with germanium:

Iwinska, M. ; Takekawa, N. ; Ivanov, V.Yu....
Journal of Crystal Growth.  480 (2017)  - p. 102-107 , 2017
Link: https://doi.org/10.1016/..
 
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14

A compensating point defect in carbon-doped GaN substrates ..:

Willoughby, W. R. ; Zvanut, M. E. ; Paudel, Subash...
Journal of Applied Physics.  123 (2017)  16 - p. , 2017
Link: https://doi.org/10.1063/..
 
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15

HVPE GaN wafers with improved crystalline and electrical pr..:

Freitas Jr., J.A. ; Culbertson, J.C. ; Mahadik, N.A....
Journal of Crystal Growth.  456 (2016)  - p. 113-120 , 2016
Link: https://doi.org/10.1016/..
 
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