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Jacopin, G.
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1

Eu3+ optical activation engineering in Al Ga1-N nanowires f..:

Cardoso, J. ; Jacopin, G. ; Faye, D.Nd....
Applied Materials Today.  22 (2021)  - p. 100893 , 2021
Link: https://doi.org/10.1016/..
 
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2

Impact of defects on Auger recombination in c-plane InGaN/G..:

Liu, W. ; Haller, C. ; Chen, Y....
Applied Physics Letters.  116 (2020)  22 - p. , 2020
Link: https://doi.org/10.1063/..
 
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3

Electroluminescence of Single InGaN/GaN Micropyramids:

Babichev, A. V. ; Denisov, D. V. ; Lavenus, P....
Optics and Spectroscopy.  126 (2019)  2 - p. 118-123 , 2019
Link: https://doi.org/10.1134/..
 
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4

Spatially dependent carrier dynamics in single InGaN/GaN co..:

Liu, W. ; Mounir, C. ; Rossbach, G....
Applied Physics Letters.  112 (2018)  5 - p. , 2018
Link: https://doi.org/10.1063/..
 
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5

GaN surface as the source of non-radiative defects in InGaN..:

Haller, C. ; Carlin, J.-F. ; Jacopin, G....
Applied Physics Letters.  113 (2018)  11 - p. , 2018
Link: https://doi.org/10.1063/..
 
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6

Propagating Polaritons in III-Nitride Slab Waveguides:

Ciers, J. ; Roch, J. G. ; Carlin, J.-F....
Physical Review Applied.  7 (2017)  3 - p. , 2017
Link: https://doi.org/10.1103/..
 
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7

Burying non-radiative defects in InGaN underlayer to increa..:

Haller, C. ; Carlin, J.-F. ; Jacopin, G....
Applied Physics Letters.  111 (2017)  26 - p. , 2017
Link: https://doi.org/10.1063/..
 
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8

Exciton dynamics at a single dislocation in GaN probed by p..:

Liu, W. ; Carlin, J.-F. ; Grandjean, N...
Applied Physics Letters.  109 (2016)  4 - p. , 2016
Link: https://doi.org/10.1063/..
 
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9

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires:

Shahmohammadi, M. ; Ganière, J.-D. ; Zhang, H....
Nano Letters.  16 (2015)  1 - p. 243-249 , 2015
Link: https://doi.org/10.1021/..
 
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10

Core–shell InGaN/GaN nanowire light emitting diodes analyze..:

Tchernycheva, M. ; Neplokh, V. ; Zhang, H....
Nanoscale.  7 (2015)  27 - p. 11692-11701 , 2015
Link: https://doi.org/10.1039/..
 
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11

InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes ..:

Tchernycheva, M. ; Lavenus, P. ; Zhang, H....
Nano Letters.  14 (2014)  5 - p. 2456-2465 , 2014
Link: https://doi.org/10.1021/..
 
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12

High-temperature Mott transition in wide-band-gap semicondu..:

Rossbach, G. ; Levrat, J. ; Jacopin, G....
Physical Review B.  90 (2014)  20 - p. , 2014
Link: https://doi.org/10.1103/..
 
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13

Interplay of the photovoltaic and photoconductive operation..:

Jacopin, G. ; De Luna Bugallo, A. ; Rigutti, L....
Applied Physics Letters.  104 (2014)  2 - p. , 2014
Link: https://doi.org/10.1063/..
 
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14

Integrated Photonic Platform Based on InGaN/GaN Nanowire Em..:

Tchernycheva, M. ; Messanvi, A. ; de Luna Bugallo, A....
Nano Letters.  14 (2014)  6 - p. 3515-3520 , 2014
Link: https://doi.org/10.1021/..
 
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15

Characterization and modeling of a ZnO nanowire ultraviolet..:

Zhang, H. ; Babichev, A. V. ; Jacopin, G....
Journal of Applied Physics.  114 (2013)  23 - p. , 2013
Link: https://doi.org/10.1063/..
 
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