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Jacquet, Jean-Claude
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1

InAlGaN-based HEMT with very low Ohmic contact resistance r..:

Pitaval, Charles ; Aroulanda, Sébastien ; Fouzi, Yassine...
Applied Physics Letters.  125 (2024)  1 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

HTRB Stress Effects on Static and Dynamic Characteristics o..:

Raja, P. Vigneshwara ; Nallatamby, Jean-Christophe ; Bouslama, Mohamed...
IEEE Transactions on Microwave Theory and Techniques.  71 (2023)  5 - p. 1957-1966 , 2023
Link: https://doi.org/10.1109/..
 
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3

Polymer Coatings for Better Robustness of GaN-based RF Circ..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),
Bellomonte, Giuseppe ; Atawa, Bienvenu ; Serghei, Anatoli... - p. 1-5 , 2022
Link: https://doi.org/10.1109/..
 
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4

Top Heat Spreaders on GaN-based HEMT devices for improved t..:

, In: 2022 24th International Microwave and Radar Conference (MIKON),
Delage, Sylvain L. ; Michel, Nicolas ; Jacquet, Jean-Claude... - p. 1-4 , 2022
Link: https://doi.org/10.23919..
 
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5

Theoretical and Experimental Substractions of Device Temper..:

Florovič, Martin ; Kováč Jr., Jaroslav ; Chvála, Aleš...
Electronics.  10 (2021)  22 - p. 2738 , 2021
Link: https://doi.org/10.3390/..
 
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6

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-st..:

Florovič, Martin ; Szobolovszký, Róbert ; Kováč Jr., Jaroslav...
Journal of Electrical Engineering.  69 (2018)  5 - p. 390-394 , 2018
Link: https://doi.org/10.2478/..
 
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7

InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC ..:

Piotrowicz, Stéphane ; Jacquet, Jean-Claude ; Gamarra, Piero...
International Journal of Microwave and Wireless Technologies.  10 (2017)  1 - p. 39-46 , 2017
Link: https://doi.org/10.1017/..
 
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8

Highlighting trapping phenomena in microwave GaN HEMTs by l..:

Potier, Clément ; Jacquet, Jean-Claude ; Dua, Christian...
International Journal of Microwave and Wireless Technologies.  7 (2015)  3-4 - p. 287-296 , 2015
Link: https://doi.org/10.1017/..
 
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9

InAlN/GaN HEMTs based L-band high-power packaged amplifiers:

Jardel, Olivier ; Jacquet, Jean-Claude ; Baczkowski, Lény...
International Journal of Microwave and Wireless Technologies.  6 (2014)  6 - p. 565-572 , 2014
Link: https://doi.org/10.1017/..
 
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10

Comprehensive analysis of GR noise in InGaP–GaAs HBT by phy..:

Nallatamby, Jean-Christophe ; Laurent, Sylvain ; Prigent, Michel...
Journal of Computational Electronics.  14 (2014)  1 - p. 4-14 , 2014
Link: https://doi.org/10.1007/..
 
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11

Numerical simulation and characterization of trapping noise..:

Nallatamby, Jean-Christophe ; Abdelhadi, Khaled ; Jacquet, Jean-Claude...
Solid-State Electronics.  81 (2013)  - p. 35-44 , 2013
Link: https://doi.org/10.1016/..
 
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12

Electrical performances of AlInN/GaN HEMTs. A comparison wi..:

Jardel, Olivier ; Callet, Guillaume ; Dufraisse, Jérémy...
International Journal of Microwave and Wireless Technologies.  3 (2011)  3 - p. 301-309 , 2011
Link: https://doi.org/10.1017/..
 
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13

A new nonlinear HEMT model for AlGaN/GaN switch application:

Callet, Guillaume ; Faraj, Jad ; Jardel, Olivier...
International Journal of Microwave and Wireless Technologies.  2 (2010)  3-4 - p. 283-291 , 2010
Link: https://doi.org/10.1017/..
 
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14

Overview of AlGaN/GaN HEMT technology for L- to Ku-band app..:

Piotrowicz, Stéphane ; Morvan, Erwan ; Aubry, Raphaël...
International Journal of Microwave and Wireless Technologies.  2 (2010)  1 - p. 105-114 , 2010
Link: https://doi.org/10.1017/..
 
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15

HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance:

, In: 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO),
Raja, P. Vigneshwara ; Nallatamby, Jean-Christophe ; Bouslama, Mohamed... - p. 1-4 , 2022
Link: https://doi.org/10.1109/..
 
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