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Jang, Jongjin
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1

Correlation between the Surface Undulation and Luminescence..:

Sheen, Mi-Hyang ; Lee, Yong-Hee ; Jang, Jongjin...
Nanomaterials.  13 (2023)  13 - p. 1946 , 2023
Link: https://doi.org/10.3390/..
 
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2

Key Considerations for Communication Satellite System Desig:

, In: 2022 27th Asia Pacific Conference on Communications (APCC),
Lee, Chang-han ; Jang, Jong-Jin ; Lee, Junho... - p. 193-194 , 2022
Link: https://doi.org/10.1109/..
 
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3

Study of enhanced photovoltaic behavior in InGaN-based sola..:

Lee, Seunga ; Honda, Yoshio ; Amano, Hiroshi..
Japanese Journal of Applied Physics.  55 (2016)  3 - p. 030306 , 2016
Link: https://doi.org/10.7567/..
 
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4

Self-assembled growth and structural analysis of inclined G..:

Lee, Kyuseung ; Chae, Sooryong ; Jang, Jongjin...
AIP Advances.  6 (2016)  4 - p. 045209 , 2016
Link: https://doi.org/10.1063/..
 
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5

Phosphor-free white-light emitters using in-situ GaN nanost..:

Min, Daehong ; Park, Donghwy ; Jang, Jongjin..
Scientific Reports.  5 (2015)  1 - p. , 2015
Link: https://doi.org/10.1038/..
 
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6

Self-assembled growth of inclined GaN nanorods on (10−10) m..:

Chae, Sooryong ; Lee, Kyuseung ; Jang, Jongjin...
Journal of Crystal Growth.  409 (2015)  - p. 65-70 , 2015
Link: https://doi.org/10.1016/..
 
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7

Correlation between luminescence and defects in nonpolar an..:

Lee, Seunga ; Yoo, Geunho ; Jang, Jongjin..
Electronic Materials Letters.  10 (2014)  1 - p. 67-72 , 2014
Link: https://doi.org/10.1007/..
 
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8

Comparison between the relaxation mechanisms of thick (0001..:

Kim, Jaehwan ; Min, Daehong ; Jang, Jongjin...
Japanese Journal of Applied Physics.  54 (2014)  2S - p. 02BA02 , 2014
Link: https://doi.org/10.7567/..
 
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9

Defect reduction of SiN x embedded m -plane GaN grown by hy..:

Woo, Seohwi ; Kim, Minho ; So, Byeongchan...
Journal of Crystal Growth.  407 (2014)  - p. 6-10 , 2014
Link: https://doi.org/10.1016/..
 
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10

Strain relaxation of thick (11–22) semipolar InGaN layer fo..:

Kim, Jaehwan ; Min, Daehong ; Jang, Jongjin...
Journal of Applied Physics.  116 (2014)  16 - p. , 2014
Link: https://doi.org/10.1063/..
 
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11

Characterization of a-plane InGaN light-emitting diodes wit..:

Yoo, Geunho ; Min, Daehong ; Lee, Kyseung...
Japanese Journal of Applied Physics.  53 (2014)  11 - p. 111001 , 2014
Link: https://doi.org/10.7567/..
 
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12

Defect reduction in (11–22) semipolar GaN with embedded InN..:

Jung, Chilsung ; Jang, Jongjin ; Hwang, Junghwan...
Journal of Crystal Growth.  370 (2013)  - p. 26-29 , 2013
Link: https://doi.org/10.1016/..
 
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13

Improved performance of semi-polar (11-22) GaN-based light-..:

Jeong, Joocheol ; Jang, Jongjin ; Hwang, Jungwhan...
Journal of Crystal Growth.  370 (2013)  - p. 114-119 , 2013
Link: https://doi.org/10.1016/..
 
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14

Effect of defects on the luminescence in semipolar InGaN/Ga..:

Lee, Seunga ; Jang, Jongjin ; Lee, Kwan‐Hyun...
physica status solidi (a).  209 (2012)  8 - p. 1526-1529 , 2012
Link: https://doi.org/10.1002/..
 
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15

Improvement of crystal quality and optical property in (11−..:

Jang, Jongjin ; Lee, Kwanhyun ; Hwang, Junghwan...
Journal of Crystal Growth.  361 (2012)  - p. 166-170 , 2012
Link: https://doi.org/10.1016/..
 
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