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Jang, Seung Yup
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1

Design and experimental demonstration of high-voltage later..:

Isukapati, Sundar Babu ; Zhang, Hua ; Liu, Tianshi...
Materials Science in Semiconductor Processing.  169 (2024)  - p. 107921 , 2024
Link: https://doi.org/10.1016/..
 
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2

Investigation of Static Performances of 1.2kV 4H-SiC MOSFET..:

Mancini, Stephen A. ; Jang, Seung Yup ; Chen, Zeyu...
IEEE Journal of the Electron Devices Society.  12 (2024)  - p. 150-158 , 2024
Link: https://doi.org/10.1109/..
 
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3

Sustainable design of low-CO2 hybrid concrete incorporating..:

Bae, Sung-Chul ; Yang, Keun-Hyeok ; Jang, Seung Yup..
Journal of Building Engineering.  92 (2024)  - p. 109798 , 2024
Link: https://doi.org/10.1016/..
 
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4

First Demonstration of 600 V 4H-SiC Lateral Bi-Directional ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jang, Seung Yup ; Isukapati, Sundar Babu ; Kim, Dongyoung. - p. 5-8 , 2023
Link: https://doi.org/10.1109/..
 
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5

Enhanced Design Architecture to Suppress Leakage Current of..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Isukapati, Sundar Babu ; Jang, Seung Yup ; Sung, Woongje - p. 358-361 , 2023
Link: https://doi.org/10.1109/..
 
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6

Static, Dynamic, and Short-circuit Characteristics of Split..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Kim, Dongyoung ; DeBoer, Skylar ; Mancini, Stephen A... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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7

Improved Blocking and Switching Characteristics of Split-Ga..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kim, Dongyoung ; DeBoer, Skylar ; Jang, Seung Yup.. - p. 350-353 , 2023
Link: https://doi.org/10.1109/..
 
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8

Analysis of Basal Plane Dislocation Motion Induced by p+ Io..:

Chen, Ze Yu ; Liu, Yafei ; Peng, Hong Yu...
Defect and Diffusion Forum.  426 (2023)  - p. 71-78 , 2023
Link: https://doi.org/10.4028/..
 
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9

Enhanced Conduction and Switching Performance of 1.2 kV 4H-..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Kim, Dongyoung ; DeBoer, Skylar ; Jang, Seung Yup.. - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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10

Edge Termination Design Considerations for 1.2kV 4H-SiC MOS..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Mancini, Stephen A ; Jang, Seung Yup ; Chen, Zeyu... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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11

Implementation of a short channel (0.3 μm) for 4H-SiC MOSFE..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kim, Dongyoung ; Jang, Seung Yup ; Morgan, Adam J.. - p. 217-220 , 2022
Link: https://doi.org/10.1109/..
 
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12

Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achiev..:

Kim, Dongyoung ; Yun, Nick ; Jang, Seung Yup..
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 495-503 , 2022
Link: https://doi.org/10.1109/..
 
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13

A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV ..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Kim, Dongyoung ; DeBoer, Skylar ; Jang, Seung Yup.. - p. 54-57 , 2022
Link: https://doi.org/10.1109/..
 
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14

A New Layout Method for Junction Field Effect Transistors (..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Lynch, Justin ; Yun, Nick ; Jang, Seung Yup.. - p. 127-131 , 2022
Link: https://doi.org/10.1109/..
 
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15

An Inclusive Structural Analysis on the Design of 1.2kV 4H-..:

Kim, Dongyoung ; yun, Nick ; Jang, Seung Yup..
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 804-812 , 2021
Link: https://doi.org/10.1109/..
 
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