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Jaroszewicz, Bohdan
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1

Si-Based Electrodes for Potentiometric Measurements of Aque..:

Zaborowski, Michał ; Tomaszewski, Daniel ; Jaroszewicz, Bohdan.
Journal of Telecommunications and Information Technology.  , 2023
Link: https://doi.org/10.26636..
 
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2

Electrical characterization of ISFETs:

Tomaszewsk, Daniel ; Yang, Chia-Ming ; Jaroszewicz, Bohdan...
Journal of Telecommunications and Information Technology.  , 2023
Link: https://doi.org/10.26636..
 
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3

HfOxFy Based ISFETs with Reactive Fluorine Doping for K+ io..:

Yang, Chia-Ming ; Lu, Tseng-Fu ; Ho, Kuan-I...
International Journal of Electrochemical Science.  9 (2014)  12 - p. 7069-7082 , 2014
Link: https://doi.org/10.1016/..
 
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4

Body effect minimization using single layer structure for p..:

Lai, Chao-Sung ; Lu, Tseng-Fu ; Yang, Chia-Ming...
Sensors and Actuators B: Chemical.  143 (2010)  2 - p. 494-499 , 2010
Link: https://doi.org/10.1016/..
 
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5

VTH -Extractors Based Readout Circuit of ISFET with Tempera..:

, In: 2007 IEEE Conference on Electron Devices and Solid-State Circuits,
Liu, Tai-Tsun ; Chung, Wen-Yaw ; Cruz, Febus Reidj G.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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6

TSSOI as an efficient tool for diagnostics of SOI technolog..:

Barańsk, Mateusz ; Sapor, Maria ; Niemiec, Halina...
Journal of Telecommunications and Information Technology.  , 2005
Link: https://doi.org/10.26636..
 
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7

High-quality p–n junction fabrication by ion implantation u..:

Jaroszewicz, Bohdan ; Budzyński, Tadeusz ; Panas, Andrzej...
Vacuum.  70 (2003)  2-3 - p. 81-85 , 2003
Link: https://doi.org/10.1016/..
 
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