E-LIB Suche - Ergebnisse für: Jena, Debdeep

1

Performance Limiting Factors of 15-GHz Ku-Band FBARs:

Zhao, Wenwen ; Singh, Rishabh ; Vishwakarma, Saurabh...
IEEE Transactions on Electron Devices. 71 (2024) 8 - p. 4968-4976 , 2024

Link: https://doi.org/10.1109/..

2

Ultrawide bandgap semiconductor heterojunction p–n diodes w..:

Agrawal, Shivali ; van Deurzen, Len ; Encomendero, Jimy...
Applied Physics Letters. 124 (2024) 10 - p. , 2024

Link: https://doi.org/10.1063/..

3

AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Cu..:

, In: 2024 Device Research Conference (DRC),

Kim, Eungkyun ; Chen, Yu-Hsin ; Encomendero, Jimy.. - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

4

Electron mobility enhancement by electric field engineering..:

Chen, Yu-Hsin ; Encomendero, Jimy ; Savant, Chandrashekhar...
Applied Physics Letters. 124 (2024) 15 - p. , 2024

Link: https://doi.org/10.1063/..

5

Polarity Switching and Josephson Junction Interfaces Invest..:

Pieczulewski, Naomi ; Wright, John ; Jena, Debdeep.
Microscopy and Microanalysis. 30 (2024) Supplement_1 - p. , 2024

Link: https://doi.org/10.1093/..

6

Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterost..:

Savant, Chandrashekhar ; Nguyen, Thai‐Son ; Vishwakarma, Saurabh...
physica status solidi (RRL) – Rapid Research Letters. , 2024

Link: https://doi.org/10.1002/..

7

Electric field induced migration of native point defects in..:

Haseman, Micah S. ; Ramdin, Daram N. ; Li, Wenshen...
Journal of Applied Physics. 133 (2023) 3 - p. , 2023

Link: https://doi.org/10.1063/..

8

2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Tr..:

Hickman, Austin ; Chaudhuri, Reet ; Li, Lei...
physica status solidi (a). , 2023

Link: https://doi.org/10.1002/..

9

15-GHz Epitaxial AlN FBARs on SiC Substrates:

Zhao, Wenwen ; Asadi, Mohammad Javad ; Li, Lei...
IEEE Electron Device Letters. 44 (2023) 6 - p. 903-906 , 2023

Link: https://doi.org/10.1109/..

10

RF operation of AlN/Al0.25Ga0.75N/AlN HEMTs with f T /f max..:

Kim, Eungkyun ; Singhal, Jashan ; Hickman, Austin...
Applied Physics Express. 16 (2023) 11 - p. 111003 , 2023

Link: https://doi.org/10.35848..

11

Optical Dipole Structure and Orientation of GaN Defect Sing..:

Geng, Yifei ; Jena, Debdeep ; Fuchs, Gregory D...
ACS Photonics. 10 (2023) 10 - p. 3723-3729 , 2023

Link: https://doi.org/10.1021/..

12

Growth windows of epitaxial NbNx films on c-plane sapphire ..:

Wright, John G. ; Xing, Huili Grace ; Jena, Debdeep
Physical Review Materials. 7 (2023) 7 - p. , 2023

Link: https://doi.org/10.1103/..

13

N-polar GaN/AlGaN/AlN high electron mobility transistors on..:

Kim, Eungkyun ; Zhang, Zexuan ; Encomendero, Jimy...
Applied Physics Letters. 122 (2023) 9 - p. , 2023

Link: https://doi.org/10.1063/..

14

Thermal conductivity enhancement of aluminum scandium nitri..:

Alvarez, Gustavo A. ; Casamento, Joseph ; van Deurzen, Len...
Materials Research Letters. 11 (2023) 12 - p. 1048-1054 , 2023

Link: https://doi.org/10.1080/..

15

AlN/AlGaN/AlN quantum well channel HEMTs:

Singhal, Jashan ; Kim, Eungkyun ; Hickman, Austin...
Applied Physics Letters. 122 (2023) 22 - p. , 2023

Link: https://doi.org/10.1063/..