E-LIB Suche - Ergebnisse für: Jeon, Sanghun

1

Effect of Annealing Temperature on Minimum Domain Size of F..:

Yun, Seokjung ; Kim, Hoon ; Seo, Myungsoo...
ACS Applied Electronic Materials. 6 (2024) 4 - p. 2134-2141 , 2024

Link: https://doi.org/10.1021/..

2

Flexible Artificial Mechanoreceptor Based on Microwave Anne..:

Jung, Minhyun ; Kim, Seungyeob ; Hwang, Junghyeon...
Advanced Electronic Materials. 10 (2024) 2 - p. , 2024

Link: https://doi.org/10.1002/..

3

Unlocking the Potential of Hafnia Ferroelectrics: Achieving..:

Yang, Ketong ; Jung, Minhyun ; Jung, Taeseung...
ACS Applied Electronic Materials. , 2024

Link: https://doi.org/10.1021/..

4

Design of Physically Unclonable Function Using Ferroelectri..:

Lim, Sehee ; Hwang, Junghyeon ; Ko, Dong Han...
IEEE Internet of Things Journal. , 2024

Link: https://doi.org/10.1109/..

5

Monolithically Integrated Complementary Ferroelectric FET X..:

Hwang, Junghyeon ; Joh, Hongrae ; Kim, Chaeheon..
ACS Applied Materials & Interfaces. 16 (2024) 2 - p. 2467-2476 , 2024

Link: https://doi.org/10.1021/..

6

Charge Trap Flash with Superior Program Efficiency by Negat..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),

Kim, Giuk ; Choi, Hyojun ; Lee, Sangho... - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

7

Ultrafast (50 ns) ID–VG Analysis on Oxide Thin-Film Transis..:

Jung, Taeseung ; Nam, Sooji ; Jeon, Sanghun
IEEE Transactions on Electron Devices. 71 (2024) 5 - p. 3009-3014 , 2024

Link: https://doi.org/10.1109/..

8

Monolithic three-dimensional hafnia-based artificial nerve ..:

Jung, Minhyun ; Kim, Seungyeob ; Hwang, Junghyeon...
Nano Energy. 126 (2024) - p. 109643 , 2024

Link: https://doi.org/10.1016/..

9

Novel Strategies Toward High-Performance FeFET for Computin..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),

Kim, Giuk ; Choi, Hyojun ; Lee, Sangho... - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

10

Design Guidelines of Hafnia Ferroelectrics and Gate-Stack f..:

Lee, Sangho ; Kim, Giuk ; Lee, Youngkyu...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1865-1871 , 2024

Link: https://doi.org/10.1109/..

11

Physics, Structures, and Applications of Fluorite‐Structure..:

Hwang, Junghyeon ; Goh, Youngin ; Jeon, Sanghun
Small. 20 (2023) 9 - p. , 2023

Link: https://doi.org/10.1002/..

12

A method of controlling the imprint effect in hafnia ferroe..:

Shin, Hunbeom ; Gaddam, Venkateswarlu ; Goh, Youngin...
Applied Physics Letters. 122 (2023) 2 - p. , 2023

Link: https://doi.org/10.1063/..

13

Comprehensive Design Guidelines of Gate Stack for QLC and H..:

, In: 2023 International Electron Devices Meeting (IEDM),

Lim, Suhwan ; Kim, Taeyoung ; Myeong, Ilho... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

14

Ultra-high Tunneling Electroresistance Ratio (2 × 104) & En..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Hwang, Junghyeon ; Kim, Chaeheon ; Shin, Hunbeom... - p. 1-2 , 2023

Link: https://doi.org/10.23919..

15

Design consideration of ferroelectric field-effect-transist..:

Yi, Boram ; Hwang, Junghyeon ; Woo Oh, Tae...
Solid-State Electronics. 206 (2023) - p. 108674 , 2023

Link: https://doi.org/10.1016/..