Jhang, Wun-Ciang
22  results:
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1

Write-Once-Read-Many-Times Nonvolatile Memory Characteristi..:

Jhang, Wun-Ciang ; Hsieh, Tsung-Chun ; Zhang, Xuan-Zhi...
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 3285-3292 , 2024
 
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2

Demonstration of high-performance STO-based WORM devices co..:

Hsu, Chih-Chieh ; Wen, Xiu-Ming ; Xiao, Kai-Zer..
Journal of Materials Chemistry C.  12 (2024)  23 - p. 8418-8425 , 2024
 
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3

Demonstration of an Al2O3 Bidirectional Selector With an Ul..:

Jhang, Wun-Ciang ; Chien, Yu-Sheng ; Hsu, Chih-Chieh
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4415-4419 , 2024
 
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4

Barium oxide write-once read-many-times memory with a high ..:

Hsu, Chih-Chieh ; Cai, Zong-Lin ; Long, Pei-Xuan...
Journal of Materials Chemistry C.  12 (2024)  8 - p. 2926-2932 , 2024
 
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7

Performance improvement of a sol–gel ZTO-based TFT due to a..:

Jhang, Wun-Ciang ; Chen, Pin-Han ; Hsu, Chih-Chieh.
Journal of Materials Chemistry C.  11 (2023)  17 - p. 5750-5761 , 2023
 
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8

Study of Electrical Characteristics for Dual-Gate TFTs With..:

Hsu, Chih-Chieh ; Li, Jin-Xian ; Huang, Po-Cheng..
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 3390-3393 , 2023
 
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10

Dual-Function Device Fabricated Using One Single SiO2 Resis..:

Jhang, Wun-Ciang ; Hsu, Chih-Chieh
IEEE Electron Device Letters.  43 (2022)  9 - p. 1428-1431 , 2022
 
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11

Modification of OFF- and ON-Resistances of SrTiO x WORM Mem..:

Hsu, Chih-Chieh ; Cheng, Chao-Wen ; Jhang, Wun-Ciang.
IEEE Transactions on Electron Devices.  69 (2022)  3 - p. 1020-1027 , 2022
 
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12

Dependence of SiO2 Gate Leakage Current on Annealing Temper..:

, In: 2022 IEEE International Conference on Consumer Electronics - Taiwan,
 
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13

Coexistence of Nonvolatile WORM, Bipolar, Unipolar, and Vol..:

Jhang, Wun-Ciang ; Hsu, Chih-Chieh
IEEE Transactions on Electron Devices.  69 (2022)  9 - p. 4914-4919 , 2022
 
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14

High on–off current ratio titanium oxynitride write-once-re..:

Hsu, Chih-Chieh ; Jhang, Wun-Ciang ; Chien, Yu-Sheng..
Semiconductor Science and Technology.  36 (2021)  6 - p. 06LT01 , 2021
 
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