Ji, In-Hwan
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1

High Temperature and High Humidity Reliability Evaluation o..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Ji, In-Hwan ; Mathew, Anoop ; Park, Jae-Hyung... - p. 1-4 , 2023
 
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4

High voltage AlGaN/GaN HFET employing low taper angle field..:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
Ji, In-Hwan ; Lee, Bongmook ; Wang, Sizhen... - p. 269-272 , 2014
 
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6

A New 1200 V Punch Through-Insulated Gate Bipolar Transisto..:

Ji, In-Hwan ; Choi, Young-Hwan ; Jeon, Byung-Chul...
Japanese Journal of Applied Physics.  46 (2007)  4S - p. 2037 , 2007
 
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7

A New Silicon-on-Insulator Lateral Insulated Gate Bipolar T..:

Ji, In-Hwan ; Choi, Young-Hwan ; Ha, Min-Woo.
Japanese Journal of Applied Physics.  46 (2007)  4S - p. 2041 , 2007
 
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8

An Improved Junction Termination Design Employing Shallow T..:

Ha, Min-Woo ; Lee, Seung-Chul ; Choi, Young-Hwan..
Japanese Journal of Applied Physics.  45 (2006)  2R - p. 626 , 2006
 
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9

A New Protective Circuit to Improve Short-Circuit Withstand..:

Choi, Young-Hwan ; Ji, In-Hwan ; Jeon, Byung-Chul..
Japanese Journal of Applied Physics.  45 (2006)  4S - p. 3317 , 2006
 
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11

A New 600 V Punch Through-Insulated Gate Bipolar Transistor..:

Ji, In-Hwan ; Jeon, Byung-Chul ; Choi, Young-Hwan..
Japanese Journal of Applied Physics.  45 (2006)  10R - p. 7587 , 2006
 
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12

Experimental Study on Improving Unclamped Inductive Switchi..:

Ji, In-Hwan ; Choi, Young-Hwan ; Kim, Soo-Seong..
Japanese Journal of Applied Physics.  45 (2006)  4S - p. 3121 , 2006
 
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14

A New Voltage between Collector and Emitter (VCE) Sensing S..:

Jeon, Byung-Chul ; Ji, In-hwan ; Ha, Min-Woo..
Japanese Journal of Applied Physics.  43 (2004)  4S - p. 1677 , 2004
 
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