Ji, Manyi
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1

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizin..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Chen, Zhengjia ; Xu, Hongyi ; He, Yufu... - p. 228-231 , 2024
 
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2

Single-Event Effects in SiC Power MOSFET Induced by Pulsed-..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Ji, Manyi ; He, Yufu ; Xu, Hongyi... - p. 180-183 , 2024
 
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3

Design and Fabrication of 1.2kV SBD Integrated 4HSiC MOSFET..:

, In: 2022 4th International Conference on Power and Energy Technology (ICPET),
Wei, Xiaoguang ; Niu, Xiping ; Wang, Baozhu... - p. 166-169 , 2022
 
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5

Sialic Acid-Targeted Nanovectors with Phenylboronic Acid-Gr..:

Ji, Manyi ; Li, Ping ; Sheng, Nan...
ACS Applied Materials & Interfaces.  8 (2016)  15 - p. 9565-9576 , 2016
 
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6

The step by step responsive nanoparticles for near-infrared..:

Xie, Gaofeng ; Yi, Huqiang ; Ding, Zexuan...
Nanomedicine: Nanotechnology, Biology and Medicine.  12 (2016)  2 - p. 566 , 2016
 
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7

Doxorubicin-loaded pH-sensitive dextran-retinal nanoparticl..:

Li, Ping ; Zhang, Yijuan ; Pan, Hong...
Journal of Controlled Release.  213 (2015)  - p. e88-e89 , 2015
 
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10

Vulnerability of fresh agricultural products supply chain: ..:

Yang, Manyi ; Qu, Shaojian ; Ji, Ying.
Socio-Economic Planning Sciences.  94 (2024)  - p. 101928 , 2024
 
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