E-LIB Suche - Ergebnisse für: Jia, Fuchun

1

Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound met..:

, In: 2022 10th International Symposium on Next-Generation Electronics (ISNE),

Jia, Mao ; Hou, Bin ; Jia, Fu-Chun... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

2

Record Power Performance of 33.1 W/mm with 62.9% PAE at X-b..:

, In: 2023 International Electron Devices Meeting (IEDM),

Yang, Ling ; Jia, Fuchun ; Lu, Hao... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

3

Novel GaN-based double-channel p-heterostructure field-effe..:

Niu 牛, Xuerui 雪锐 ; Hou 侯, Bin 斌 ; Zhang 张, Meng 濛...
Chinese Physics B. 32 (2023) 10 - p. 108101 , 2023

Link: https://doi.org/10.1088/..

4

High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped..:

Yu, Qian ; Shi, Chunzhou ; Yang, Ling...
IEEE Electron Device Letters. 44 (2023) 4 - p. 582-585 , 2023

Link: https://doi.org/10.1109/..

5

High VTH and Improved Gate Reliability in P-GaN Gate HEMTs ..:

Jia, Mao ; Hou, Bin ; Yang, Ling...
IEEE Electron Device Letters. 44 (2023) 9 - p. 1404-1407 , 2023

Link: https://doi.org/10.1109/..

6

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel H..:

Shi, Chunzhou ; Yang, Ling ; Zhang, Meng...
IEEE Transactions on Electron Devices. 70 (2023) 5 - p. 2241-2246 , 2023

Link: https://doi.org/10.1109/..

7

Transducer-Less Thermoreflectance Technique for Measuring T..:

Yuan, Chao ; Meng, Biwei ; Mao, Yali...
ACS Applied Electronic Materials. 4 (2022) 12 - p. 5984-5995 , 2022

Link: https://doi.org/10.1021/..

8

High power-added-efficiency AlGaN/GaN HEMTs fabricated by a..:

Zhang, Xinchuang ; Hou, Bin ; Jia, Fuchun...
Chinese Physics B. 31 (2022) 2 - p. 027301 , 2022

Link: https://doi.org/10.1088/..

9

930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN D..:

Jia, Fuchun ; Ma, Xiaohua ; Yang, Ling...
IEEE Electron Device Letters. 43 (2022) 9 - p. 1400-1403 , 2022

Link: https://doi.org/10.1109/..

10

Improved Breakdown Voltage and Low Damage E-Mode Operation ..:

Liu, Siyu ; Zhu, Jiejie ; Guo, Jingshu...
IEEE Electron Device Letters. 43 (2022) 10 - p. 1621-1624 , 2022

Link: https://doi.org/10.1109/..

11

The Improvement Breakdown Voltage of GaN on Si Pin Diode by..:

, In: 2022 IEEE 2nd International Conference on Computer Systems (ICCS),

Jia, Fuchun ; Chang, Qingyuan ; Chen, Xiaosheng... - p. 136-139 , 2022

Link: https://doi.org/10.1109/..

12

Improved device performance of recessed-gate AlGaN/GaN HEMT..:

Zhang, Xinchuang ; Wu, Mei ; Hou, Bin...
Chinese Physics B. 31 (2022) 5 - p. 057301 , 2022

Link: https://doi.org/10.1088/..

13

Influence of Mg Out‐Diffusion Effect on the Threshold Volta..:

Niu, Xuerui ; Ma, Xiaohua ; Zhang, Meng...
physica status solidi (b). 260 (2022) 5 - p. , 2022

Link: https://doi.org/10.1002/..

14

Analytical Model on the Threshold Voltage of p-Channel Hete..:

Niu, Xuerui ; Hou, Bin ; Yang, Ling...
IEEE Transactions on Electron Devices. 69 (2022) 1 - p. 57-62 , 2022

Link: https://doi.org/10.1109/..

15

The DC Performance and RF Characteristics of GaN-Based HEMT..:

Yang, Ling ; Hou, Bin ; Jia, Fuchun...
IEEE Transactions on Electron Devices. 69 (2022) 8 - p. 4170-4174 , 2022

Link: https://doi.org/10.1109/..