Jiang, Xue-Yin
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1

The material properties of novel boron doped InZnO thin fil..:

Zhong, De-Yao ; Li, Jun ; Zhou, You-Hang...
Superlattices and Microstructures.  122 (2018)  - p. 377-386 , 2018
 
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2

Atomic layer deposition deposited high dielectric constant ..:

Huang, Chuan-Xin ; Li, Jun ; Zhong, De-Yao...
Superlattices and Microstructures.  109 (2017)  - p. 852-859 , 2017
 
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3

A comparison of density of states between InGaZnO based TFT..:

Huang, Chuan-Xin ; Li, Jun ; Zhu, Wen-Qing...
Molecular Crystals and Liquid Crystals.  651 (2017)  1 - p. 221-227 , 2017
 
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5

TiSiOx gate dielectrics produced by reactive sputtering for..:

Fu, Yi-Zhou ; Li, Jun ; Zhao, Cheng-Yu...
Materials Science in Semiconductor Processing.  61 (2017)  - p. 125-130 , 2017
 
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6

Amorphous LaZnSnO thin films by a combustion solution proce..:

Li, Jun ; Huang, Chuan-Xin ; Fu, Yi-Zhou...
Electronic Materials Letters.  12 (2016)  1 - p. 76-81 , 2016
 
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9

Characterization of dual-target co-sputtered novel Hf-doped..:

Huang, Chuan-Xin ; Li, Jun ; Fu, Yi-Zhou...
Journal of Alloys and Compounds.  681 (2016)  - p. 81-87 , 2016
 
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11

Temperature-dependent field-effect measurements method to i..:

Huang, Chuan-Xin ; Li, Jun ; Ding, Xing-Wei...
Superlattices and Microstructures.  83 (2015)  - p. 367-375 , 2015
 
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12

Origin of the improved stability under negative gate-bias i..:

Huang, Chuan-Xin ; Li, Jun ; Fu, Yi-Zhou...
Superlattices and Microstructures.  88 (2015)  - p. 426-433 , 2015
 
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