Jiang, Zhuolin
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1

600 V/7 A Large-Size RESURF β-Ga2O3 Schottky Barrier Diode ..:

Wei, Yuxi ; Luo, Xiaorong ; Wang, Yuangang...
IEEE Transactions on Electron Devices.  71 (2024)  2 - p. 1320-1324 , 2024
 
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3

Realizing High Stability of Threshold Voltage in NiO/β-Ga2O..:

Jiang, Zhuolin ; Deng, Hongru ; Zhou, Xuanze...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1598-1605 , 2024
 
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5

Low Reverse Conduction Loss β-Ga2O3 Vertical FinFET With an..:

Wei, Yuxi ; Peng, Xiaosong ; Jiang, Zhuolin...
IEEE Transactions on Electron Devices.  70 (2023)  7 - p. 3454-3461 , 2023
 
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8

Low Turn-On Voltage and High Breakdown Voltage β-Ga2O3 Diod..:

Wei, Yuxi ; Lu, Juan ; Jiang, Zhuolin...
IEEE Transactions on Electron Devices.  70 (2023)  1 - p. 196-203 , 2023
 
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9

Waste rubber-modified sulfur-fly ash-sand composites as low..:

Bai, Ru ; Zhang, Ju ; Yan, Changwang...
Materials Chemistry and Physics.  306 (2023)  - p. 128060 , 2023
 
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11

High Current Density and High Breakdown Voltage Enhancement..:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),
Jiang, Zhuolin ; Zhao, Kai ; Deng, Hongru... - p. 287-290 , 2023
 
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12

Experimental Investigation on Threshold Voltage Instability..:

Jiang, Zhuolin ; Wei, Yuxi ; Lv, Yuanjie...
IEEE Transactions on Electron Devices.  69 (2022)  9 - p. 5048-5054 , 2022
 
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13

Nonuniform Mechanism for Positive and Negative Bias Stress ..:

Jiang, Zhuolin ; Wei, Jie ; Lv, Yuanjie...
IEEE Transactions on Electron Devices.  69 (2022)  10 - p. 5509-5515 , 2022
 
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14

Experimental Study on Electrical Characteristics of Large-S..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Wei, Jie ; Wei, Yuxi ; Lu, Juan... - p. 97-100 , 2022
 
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