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Jo, Hyeon-Bhin
24  results:
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1

A New Methodology to Analyze Carrier Transport Properties f..:

Kim, Hyo-Jin ; Yoo, Ji-Hoon ; Park, Wan-Soo...
IEEE Electron Device Letters.  44 (2023)  2 - p. 229-232 , 2023
Link: https://doi.org/10.1109/..
 
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2

Impact of Output Conductance on Current-Gain Cut-Off Freque..:

Kim, Hyo-Jin ; Lee, In-Geun ; Jo, Hyeon-Bhin...
Electronics.  12 (2023)  2 - p. 259 , 2023
Link: https://doi.org/10.3390/..
 
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3

Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron..:

Park, Wan-Soo ; Jo, Hyeon-Bhin ; Kim, Hyo-Jin...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 2081-2089 , 2023
Link: https://doi.org/10.1109/..
 
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4

Terahertz In0.8 Ga0.2 As quantum-well HEMTs toward 6G appli..:

, In: 2022 International Electron Devices Meeting (IEDM),
Park, Wan-Soo ; Jo, Hyeon-Bhin ; Kim, Hyo-Jin... - p. 11.4.1-11.4.4 , 2022
Link: https://doi.org/10.1109/..
 
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5

Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs..:

Lee, In-Geun ; Jo, Hyeon-Bhin ; Baek, Ji-Min...
Electronics.  11 (2022)  17 - p. 2744 , 2022
Link: https://doi.org/10.3390/..
 
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6

On the universality of drain-induced-barrier-lowering in fi..:

, In: 2022 International Electron Devices Meeting (IEDM),
Choi, Su-Min ; Jo, Hyeon-Bhin ; Yun, Do-Young... - p. 8.3.1-8.3.4 , 2022
Link: https://doi.org/10.1109/..
 
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7

Comprehensive modeling of the extrinsic transconductance fo..:

Yun, Seung-Won ; Jo, Hyeon-Bhin ; Jeong, Hyeon-Seok...
Solid-State Electronics.  198 (2022)  - p. 108484 , 2022
Link: https://doi.org/10.1016/..
 
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8

Physics-Based Analytical Channel Charge Model of In xGa1-xA..:

Jeong, Hyeon-Seok ; Park, Wan-Soo ; Jo, Hyeon-Bhin...
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 387-396 , 2022
Link: https://doi.org/10.1109/..
 
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9

Extraction of effective mobility of In Ga As/In Al As quant..:

Park, Wan-Soo ; Kim, Jun-Gyu ; Yun, Seung-Won...
Solid-State Electronics.  197 (2022)  - p. 108446 , 2022
Link: https://doi.org/10.1016/..
 
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10

Theoretical and experimental analysis of the source resista..:

Lee, In-Geun ; Ko, Dae-Hong ; Yun, Seung-Won...
Journal of the Korean Physical Society.  78 (2021)  6 - p. 516-522 , 2021
Link: https://doi.org/10.1007/..
 
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11

Impact of Sulfur Passivation on Carrier Transport Propertie..:

Kim, Jun-Gyu ; Jo, Hyeon-Bhin ; Lee, In-Geun..
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 209-214 , 2021
Link: https://doi.org/10.1109/..
 
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12

$\text{In}_{x}\text{Ga}_{1-x}\text{As}$ quantum-well high-e..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Yun, Seung-Won ; Jo, Hyeon-Bhin ; Yoo, Ji-Hoon... - p. 11.3.1-11.3.4 , 2021
Link: https://doi.org/10.1109/..
 
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13

Vertical InGaAs tunnel-field-effect transistors by an elect..:

Baek, Ji-Min ; Jo, Hyeon-Bhin ; Yun, Do-Young...
Solid-State Electronics.  164 (2020)  - p. 107681 , 2020
Link: https://doi.org/10.1016/..
 
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14

Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors..:

Jo, Hyeon-Bhin ; Yun, Do-Young ; Baek, Ji-Min...
Applied Physics Express.  12 (2019)  5 - p. 054006 , 2019
Link: https://doi.org/10.7567/..
 
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15

Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFE..:

Lee, In-Geun ; Jo, Hyeon-Bhin ; Yun, Do-Young...
Applied Physics Express.  12 (2019)  6 - p. 064003 , 2019
Link: https://doi.org/10.7567/..
 
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