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Jokubavicius, Valdas
101  results:
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1

New Approaches and Understandings in the Growth of Cubic Si..:

La Via, Francesco ; Zimbone, Massimo ; Bongiorno, Corrado...
Materials.  14 (2021)  18 - p. 5348 , 2021
Link: https://doi.org/10.3390/..
 
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2

Nanoporous Cubic Silicon Carbide Photoanodes for Enhanced S..:

Jian, Jing-Xin ; Jokubavicius, Valdas ; Syväjärvi, Mikael..
ACS Nano.  15 (2021)  3 - p. 5502-5512 , 2021
Link: https://doi.org/10.1021/..
 
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3

Ligand hyperfine interactions at silicon vacancies in 4H-Si:

Son, Nguyen Tien ; Stenberg, Pontus ; Jokubavicius, Valdas...
Journal of Physics: Condensed Matter.  31 (2019)  19 - p. 195501 , 2019
Link: https://doi.org/10.1088/..
 
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4

An adhesive bonding approach by hydrogen silsesquioxane for..:

Lin, Li ; Ou, Yiyu ; Jokubavicius, Valdas...
Materials Science in Semiconductor Processing.  91 (2019)  - p. 9-12 , 2019
Link: https://doi.org/10.1016/..
 
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5

Energy levels and charge state control of the carbon antisi..:

Son, Nguyen Tien ; Stenberg, Pontus ; Jokubavicius, Valdas...
Applied Physics Letters.  114 (2019)  21 - p. , 2019
Link: https://doi.org/10.1063/..
 
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6

Electrical Characterisation of Thick 3C-SiC Layers Grown on..:

Li, Fan ; Jokubavicius, Valdas ; Jennings, Michael R....
Materials Science Forum.  963 (2019)  - p. 353-356 , 2019
Link: https://doi.org/10.4028/..
 
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7

A comparative study of high-quality C-face and Si-face 3C-S..:

Shi, Yuchen ; Jokubavicius, Valdas ; Höjer, Pontus...
Journal of Physics D: Applied Physics.  52 (2019)  34 - p. 345103 , 2019
Link: https://doi.org/10.1088/..
 
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8

Elimination of step bunching in the growth of large-area mo..:

Shi, Yuchen ; Zakharov, Alexei A. ; Ivanov, Ivan G....
Carbon.  140 (2018)  - p. 533-542 , 2018
Link: https://doi.org/10.1016/..
 
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9

Boron-doping of cubic SiC for intermediate band solar cells..:

Carvalho, Patricia ; Thørgesen, Annett ; Ma, Quanbao...
SciPost Physics.  5 (2018)  3 - p. , 2018
Link: https://doi.org/10.21468..
 
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10

Wafer Scale Growth and Characterization of Edge Specific Gr..:

Zakharov, Alexei A. ; Vinogradov, Nikolay A. ; Aprojanz, Johannes...
ACS Applied Nano Materials.  2 (2018)  1 - p. 156-162 , 2018
Link: https://doi.org/10.1021/..
 
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11

Optical and Microstructural Investigation of Heavy B-Doping..:

Galeckas, Augustinas ; Carvalho, Patricia Almeida ; Ma, Quan Bao...
Materials Science Forum.  924 (2018)  - p. 221-224 , 2018
Link: https://doi.org/10.4028/..
 
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12

Characterization of B-Implanted 3C-SiC for Intermediate Ban..:

Ma, Quan Bao ; Carvalho, Patricia Almeida ; Galeckas, Augustinas...
Materials Science Forum.  897 (2017)  - p. 299-302 , 2017
Link: https://doi.org/10.4028/..
 
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13

Isolated Spin Qubits in SiC with a High-Fidelity Infrared S..:

Christle, David J. ; Klimov, Paul V. ; de las Casas, Charles F....
Physical Review X.  7 (2017)  2 - p. , 2017
Link: https://doi.org/10.1103/..
 
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14

(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal..:

Yakimova, Rositsa ; Ivanov, Ivan G. ; Vines, Lasse...
ECS Transactions.  80 (2017)  7 - p. 107-115 , 2017
Link: https://doi.org/10.1149/..
 
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15

White Light Emission from Fluorescent SiC with Porous Surfa..:

Lu, Weifang ; Ou, Yiyu ; Fiordaliso, Elisabetta Maria...
Scientific Reports.  7 (2017)  1 - p. , 2017
Link: https://doi.org/10.1038/..
 
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