Juillaguet, S.
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2

Electrical transport properties of highly doped N-type GaN ..:

Konczewicz, L ; Litwin-Staszewska, E ; Zajac, M...
Semiconductor Science and Technology.  37 (2022)  5 - p. 055012 , 2022
 
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6

High Temperature Annealing of MBE-grown Mg-doped GaN:

Contreras, S ; Konczewicz, L ; Peyre, H...
Journal of Physics: Conference Series.  864 (2017)  - p. 012018 , 2017
 
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7

Optical investigations and strain effect in AlGaN/GaN epita..:

Jayasakthi, M. ; Juillaguet, S. ; Peyre, H....
Journal of Physics: Conference Series.  864 (2017)  - p. 012021 , 2017
 
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8

Influence of AlN thickness on AlGaN epilayer grown by MOCVD:

Jayasakthi, M. ; Juillaguet, S. ; Peyre, H....
Superlattices and Microstructures.  98 (2016)  - p. 515-521 , 2016
 
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11

Impact of extended defects on Hall and magnetoresistivity e..:

Vasiliauskas, R ; Mekys, A ; Malinovskis, P...
Journal of Physics D: Applied Physics.  45 (2012)  22 - p. 225102 , 2012
 
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12

Shockley-Frank stacking faults in 6H-SiC:

Sun, J. W. ; Robert, T. ; Andreadou, A....
Journal of Applied Physics.  111 (2012)  11 - p. , 2012
 
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14

Comparative micro-photoluminescence investigation of ZnO he..:

Sun, J.W. ; Khranovskyy, V. ; Mexis, M....
Journal of Luminescence.  132 (2012)  1 - p. 122-127 , 2012
 
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15

Fluorescent silicon carbide as an ultraviolet-to-visible li..:

Sun, J W ; Kamiyama, S ; Jokubavicius, V...
Journal of Physics D: Applied Physics.  45 (2012)  23 - p. 235107 , 2012
 
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