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Kabouche, Riad
124  results:
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1

GaN-Based Lateral and Vertical Devices:

, In: Springer Handbook of Semiconductor Devices; Springer Handbooks,
Meneghini, Matteo ; Chowdhury, Srabanti ; Derluyn, Joff... - p. 525-578 , 2022
Link: https://doi.org/10.1007/..
 
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2

Short term reliability and robustness of ultra-thin barrier..:

Gao, ZHan ; Meneghini, Matteo ; Harrouche, Kathia...
Microelectronics Reliability.  123 (2021)  - p. 114199 , 2021
Link: https://doi.org/10.1016/..
 
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3

High Breakdown Voltage and Low Buffer Trapping in Superlatt..:

Tajalli, Alaleh ; Meneghini, Matteo ; Besendörfer, Sven...
Materials.  13 (2020)  19 - p. 4271 , 2020
Link: https://doi.org/10.3390/..
 
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4

Short Term Reliability and Robustness of ultra-thin barrier..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
Gao, Zhan. ; Meneghini, Matteo. ; Harrouche, Kathia... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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5

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buff..:

Tajalli, Alaleh ; Borga, Matteo ; Meneghini, Matteo...
Micromachines.  11 (2020)  1 - p. 101 , 2020
Link: https://doi.org/10.3390/..
 
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6

High Power AlN/GaN HEMTs with record power-added-efficiency..:

, In: 2020 IEEE/MTT-S International Microwave Symposium (IMS),
Harrouche, Kathia ; Kabouche, Riad ; Okada, Etienne. - p. 285-288 , 2020
Link: https://doi.org/10.1109/..
 
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7

High Performance and Highly Robust AlN/GaN HEMTs for Millim..:

Harrouche, Kathia ; Kabouche, Riad ; Okada, Etienne.
IEEE Journal of the Electron Devices Society.  7 (2019)  - p. 1145-1150 , 2019
Link: https://doi.org/10.1109/..
 
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8

Low On‐Resistance and Low Trapping Effects in 1200 V Superl..:

Kabouche, Riad ; Abid, Idriss ; Püsche, Roland...
physica status solidi (a).  217 (2019)  7 - p. , 2019
Link: https://doi.org/10.1002/..
 
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9

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN Hi..:

Abid, Idriss ; Kabouche, Riad ; Bougerol, Catherine...
Micromachines.  10 (2019)  10 - p. 690 , 2019
Link: https://doi.org/10.3390/..
 
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10

Transmorphic epitaxial growth of AlN nucleation layers on S..:

Lu, Jun ; Chen, Jr-Tai ; Dahlqvist, Martin...
Applied Physics Letters.  115 (2019)  22 - p. , 2019
Link: https://doi.org/10.1063/..
 
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11

High power, high PAE Q-band sub-10 nm barrier thickness AlN..:

Dogmus, Ezgi ; Kabouche, Riad ; Linge, Astrid...
physica status solidi (a).  214 (2017)  8 - p. 1600797 , 2017
Link: https://doi.org/10.1002/..
 
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12

InAlGaN/GaN HEMTs at Cryogenic Temperatures:

Dogmus, Ezgi ; Kabouche, Riad ; Lepilliet, Sylvie...
Electronics.  5 (2016)  2 - p. 31 , 2016
Link: https://doi.org/10.3390/..
 
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13

High Electron Confinement under High Electric Field in RF G..:

Medjdoub, Farid ; Kabouche, Riad ; Dogmus, Ezgi..
Electronics.  5 (2016)  1 - p. 12 , 2016
Link: https://doi.org/10.3390/..
 
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14

High electron mobility in high-polarization sub-10 nm barri..:

Medjdoub, Farid ; Kabouche, Riad ; Linge, Astrid...
Applied Physics Express.  8 (2015)  10 - p. 101001 , 2015
Link: https://doi.org/10.7567/..
 
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15

Above 70% PAE in Q-band with AlN/GaN HEMTs structures:

Harrouche, Kathia ; Kabouche, Riad ; Okada, Etienne.
hal-03279173.  , 2021
Link: https://hal.archives-ouv..
 
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