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Kamata, Isaho
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1

Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h ..:

Okamoto, Takeshi ; Uehigashi, Hideyuki ; Kanda, Takahiro...
Solid State Phenomena.  342 (2023)  - p. 105-112 , 2023
Link: https://doi.org/10.4028/..
 
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2

Investigation of propagation and coalescence of threading s..:

Kamata, Isaho ; Hoshino, Norihiro ; Betsuyaku, Kiyoshi..
Journal of Crystal Growth.  590 (2022)  - p. 126676 , 2022
Link: https://doi.org/10.1016/..
 
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3

Mechanical-stressing measurements of formation energy of si..:

Maeda, Koji ; Murata, Koichi ; Kamata, Isaho.
Applied Physics Express.  14 (2021)  4 - p. 044001 , 2021
Link: https://doi.org/10.35848..
 
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4

Formation of Double Shockley Stacking Faults in Heavily Nit..:

Sugiyama, Naohiro ; Mitani, Takeshi ; Kamata, Isaho...
Materials Science Forum.  1004 (2020)  - p. 427-432 , 2020
Link: https://doi.org/10.4028/..
 
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5

Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Meth..:

Tokuda, Yuichiro ; Hoshino, Norihiro ; Kuno, Hironari...
Materials Science Forum.  1004 (2020)  - p. 5-13 , 2020
Link: https://doi.org/10.4028/..
 
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6

Reduction in dislocation densities in 4H-SiC bulk crystal g..:

Hoshino, Norihiro ; Kamata, Isaho ; Kanda, Takahiro...
Applied Physics Express.  13 (2020)  9 - p. 095502 , 2020
Link: https://doi.org/10.35848..
 
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7

Development of 150-mm 4H-SiC Substrates Using a High-Temper..:

Okamoto, Takeshi ; Kanda, Takahiro ; Tokuda, Yuichiro...
Materials Science Forum.  1004 (2020)  - p. 14-19 , 2020
Link: https://doi.org/10.4028/..
 
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8

Suppressed expansion of single Shockley stacking faults at ..:

Maeda, Koji ; Murata, Koichi ; Tawara, Takeshi..
Applied Physics Express.  12 (2019)  12 - p. 124002 , 2019
Link: https://doi.org/10.7567/..
 
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9

Direct evaluation of threading dislocations in 4H-SiC throu..:

Hadorn, Jason Paul ; Tanuma, Ryohei ; Kamata, Isaho.
Philosophical Magazine.  100 (2019)  2 - p. 194-216 , 2019
Link: https://doi.org/10.1080/..
 
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10

Glide of C-core partial dislocations along edges of expandi..:

Tokuda, Yuichiro ; Kamata, Isaho ; Hoshino, Norihiro.
Japanese Journal of Applied Physics.  58 (2019)  12 - p. 121005 , 2019
Link: https://doi.org/10.7567/..
 
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11

Monitoring of Substrate and Epilayer Surfaces by Mirror Pro..:

Kamata, Isaho ; Ohira, Kentaro ; Kobayashi, Kenji...
Materials Science Forum.  963 (2019)  - p. 255-258 , 2019
Link: https://doi.org/10.4028/..
 
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12

X-ray topographical analysis of 4H-SiC epitaxial layers usi..:

Kamata, Isaho ; Tsusaka, Yoshiyuki ; Tanuma, Ryohei.
Japanese Journal of Applied Physics.  57 (2018)  9 - p. 090314 , 2018
Link: https://doi.org/10.7567/..
 
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13

Immobilization Phenomenon of Partials Surrounding Double Sh..:

Sugiyama, Naohiro ; Suo, Hiromasa ; Eto, Kazuma...
Materials Science Forum.  924 (2018)  - p. 160-163 , 2018
Link: https://doi.org/10.4028/..
 
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14

X-Ray Topography Analysis of 4H-SiC Crystals Grown by the H..:

Kamata, Isaho ; Hoshino, Norihiro ; Tokuda, Yuichiro...
Materials Science Forum.  924 (2018)  - p. 180-183 , 2018
Link: https://doi.org/10.4028/..
 
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15

Recent advances in 4H-SiC epitaxy for high-voltage power de..:

Tsuchida, Hidekazu ; Kamata, Isaho ; Miyazawa, Tetsuya...
Materials Science in Semiconductor Processing.  78 (2018)  - p. 2-12 , 2018
Link: https://doi.org/10.1016/..
 
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