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Kang, Chang Yong
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1

Microstructure and Nanosize Precipitate of Nitrided 316L St..:

Kim, Sul Gi ; Kim, Jae Nam ; Wang, Jei Pil.
Metals and Materials International.  25 (2018)  1 - p. 127-134 , 2018
Link: https://doi.org/10.1007/..
 
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2

Effect of Aluminum Concentration on Damping Capacity during..:

Ahn, Jae Hyeon ; Kwak, Ju Ho ; Kang, Chang Yong.
Materials Science Forum.  941 (2018)  - p. 1178-1182 , 2018
Link: https://doi.org/10.4028/..
 
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3

Effect of Prior Strain on Damping Capacity and Mechanical P..:

Kwak, Juho ; Kang, Chang Yong ; Kwon, Han Sang.
Materials Science Forum.  879 (2016)  - p. 1053-1056 , 2016
Link: https://doi.org/10.4028/..
 
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4

Comparison Study of Oxidation Behavior of Low Carbon Steel ..:

Ha, Sang An ; Kim, Dong Kyun ; Lee, Woo Jin...
Advanced Materials Research.  1025-1026 (2014)  - p. 504-508 , 2014
Link: https://doi.org/10.4028/..
 
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5

Investigation of process-induced performance variability an..:

Baek, Rock-Hyun ; Kang, Chang Yong ; Sohn, Chang-Woo..
Solid-State Electronics.  96 (2014)  - p. 27-33 , 2014
Link: https://doi.org/10.1016/..
 
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6

Improved Degradation and Recovery Characteristics of SiGe p..:

Choi, Do-Young ; Sohn, Chang-Woo ; Sagong, Hyun Chul...
Japanese Journal of Applied Physics.  52 (2013)  4S - p. 04CC21 , 2013
Link: https://doi.org/10.7567/..
 
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7

Reliability study of methods to suppress boron transient en..:

Park, Min Sang ; Kim, Yonghyun ; Lee, Kyong Taek...
Microelectronic Engineering.  112 (2013)  - p. 80-83 , 2013
Link: https://doi.org/10.1016/..
 
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8

Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect tr..:

Loh, Wei-Yip ; Jeon, Kanghoon ; Kang, Chang Yong...
Solid-State Electronics.  65-66 (2011)  - p. 22-27 , 2011
Link: https://doi.org/10.1016/..
 
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9

A comparative study of depth profiling of interface states ..:

Lee, Kyong Taek ; Kang, Chang Yong ; Choi, Hyun-Sik...
Microelectronic Engineering.  88 (2011)  12 - p. 3411-3414 , 2011
Link: https://doi.org/10.1016/..
 
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10

Barrier engineering in metal–aluminum oxide–nitride–oxide–s..:

Kang, Chang Yong
Current Applied Physics.  10 (2010)  1 - p. e27-e31 , 2010
Link: https://doi.org/10.1016/..
 
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11

Effect of Si capping layer on the interface quality and NBT..:

Yoo, Ook Sang ; Oh, Jungwoo ; Min, Kyung Seok...
Microelectronic Engineering.  86 (2009)  3 - p. 259-262 , 2009
Link: https://doi.org/10.1016/..
 
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12

High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Fiel..:

Oh, Jungwoo ; Majhi, Prashant ; Kang, Chang Yong...
Japanese Journal of Applied Physics.  48 (2009)  4S - p. 04C055 , 2009
Link: https://doi.org/10.1143/..
 
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13

Performance and reliability improvement of HfSiON gate diel..:

Park, Hong Bae ; Ju, Byongsun ; Kang, Chang Yong...
Applied Physics Letters.  94 (2009)  4 - p. , 2009
Link: https://doi.org/10.1063/..
 
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14

Effects of a Gd capping layer on electrical characteristics..:

Park, Hong Bae ; Park, Chang Seo ; Kang, Chang Yong...
Applied Physics Letters.  95 (2009)  19 - p. , 2009
Link: https://doi.org/10.1063/..
 
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15

Comparison of La-based high-k dielectrics: HfLaSiON and HfL..:

Choi, Won-Ho ; Han, In-Shik ; Kwon, Hyuk-Min...
Microelectronic Engineering.  86 (2009)  3 - p. 268-271 , 2009
Link: https://doi.org/10.1016/..
 
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