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Kao, K.-H.
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1

Extracting Device Parameters of TFTs With Ultrathin Channel..:

Chen, Y.-C. ; Chou, J. -P. ; Chen, K. -C....
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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2

Study of Endurance Performance of SiO$_{\text{2}}$ Interfac..:

Agarwal, A. ; Walke, A. M. ; Ronchi, N...
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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3

Clinical and neurocognitive outcomes in patients with supra..:

Ko, T ; Tsai, C H T ; Kao, H L K.
European Heart Journal.  44 (2023)  Supplement_2 - p. , 2023
Link: https://doi.org/10.1093/..
 
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4

How Fault-Tolerant Quantum Computing Benefits from Cryo-CMO..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Chiang, H.-L. ; Hadi, R. A. ; Wang, J.-F.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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5

MOSFET Characterization with Reduced Supply Voltage at Low ..:

, In: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC),
Lin, W.-C. ; Huang, H.-P. ; Kao, K.-H.... - p. 9-12 , 2023
Link: https://doi.org/10.1109/..
 
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6

First Demonstration of Defect Elimination for Cryogenic Ge ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Yu, X.-R. ; Hsieh, C.-C. ; Chuang, M.-H.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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7

First Demonstration of Vertical Stacked Hetero-Oriented n-G..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Yu, X.-R. ; Chang, W.-H ; Hong, T.-C.... - p. 399-400 , 2022
Link: https://doi.org/10.1109/..
 
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8

Integration Design and Process of 3-D Heterogeneous 6T SRAM..:

, In: 2022 International Electron Devices Meeting (IEDM),
Yu, X.-R. ; Chuang, M.-H. ; Chang, S.-W.... - p. 20.5.1-20.5.4 , 2022
Link: https://doi.org/10.1109/..
 
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9

Linking Room- and Low-Temperature Electrical Performance of..:

Kao, K.-H. ; Godfrin, C. ; Elsayed, A....
IEEE Electron Device Letters.  43 (2022)  5 - p. 674-677 , 2022
Link: https://doi.org/10.1109/..
 
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10

First Demonstration of Heterogeneous L-shaped Field Effect ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Yang, C.-Y. ; Sung, P.-J. ; Chuang, M.-H.... - p. 20.2.1-20.2.4 , 2022
Link: https://doi.org/10.1109/..
 
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11

First Demonstration of Heterogeneous IGZO/Si CFET Monolithi..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Chang, S.-W. ; Lu, T.-H. ; Yang, C.-Y.... - p. 34.4.1-34.4.4 , 2021
Link: https://doi.org/10.1109/..
 
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12

Fabrication of $\Omega$ -gated Negative Capacitance FinFETs..:

, In: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),
Sung, P.-J. ; Su, C.-J. ; Lu, D. D.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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13

First Demonstration of CMOS Inverter and 6T-SRAM Based on G..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Chang, S.-W. ; Li, J.-H. ; Huang, M.-K.... - p. 11.7.1-11.7.4 , 2019
Link: https://doi.org/10.1109/..
 
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14

Tension band plating is less effective in achieving equaliz..:

Lee, W.-C. ; Kao, H.-K. ; Yang, W.-E..
Journal of Children's Orthopaedics.  12 (2018)  6 - p. 629-634 , 2018
Link: https://doi.org/10.1302/..
 
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15

P235. Predicting morbidity and mortality after surgical res..:

Chang, K.-P. ; Kao, H.-K. ; Liao, C.-T.
Oral Oncology.  47 (2011)  - p. S149 , 2011
Link: https://doi.org/10.1016/..
 
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