E-LIB Suche - Ergebnisse für: Kaplar, R. J.

1

Single-event burnout in homojunction GaN vertical PiN diode..:

Senarath, A. S. ; Islam, S. ; Sengupta, A....
Applied Physics Letters. 124 (2024) 13 - p. , 2024

Link: https://doi.org/10.1063/..

2

Surface Charge Migration in SiC Power MOSFETs Induced by HV..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Rummel, B.D. ; Glaser, C.E. ; Gurule, R.T.... - p. P52.RT-1-P52.RT-6 , 2024

Link: https://doi.org/10.1109/..

3

Sources of error and methods to improve accuracy in interfa..:

Rummel, B. D. ; Cooper, J. A. ; Morisette, D. T....
Journal of Applied Physics. 134 (2023) 12 - p. , 2023

Link: https://doi.org/10.1063/..

4

Identification of the defect dominating high temperature re..:

DasGupta, S. ; Slobodyan, O. ; Smith, T....
Applied Physics Letters. 120 (2022) 5 - p. , 2022

Link: https://doi.org/10.1063/..

5

A Co-Design Approach to Understanding the Impact of Ultra-W..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Kaplar, R. ; Goodnick, S. ; Shoemaker, J.... - p. 116-118 , 2022

Link: https://doi.org/10.1109/..

6

at]Hard-switching reliability studies of 1200 V vertical Ga..:

Slobodyan, O. ; Smith, T. ; Flicker, J....
MRS Communications. 8 (2018) 4 - p. 1413-1417 , 2018

Link: https://doi.org/10.1557/..

7

Design & Evaluation of a Hybrid Switched Capacitor Circuit ..:

, In: 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC),

Stewart, J. ; Delhotal, J. ; Richards, J.... - p. 3224-3229 , 2017

Link: https://doi.org/10.1109/..

8

Ohmic contacts to Al‐rich AlGaN heterostructures:

Douglas, E. A. ; Reza, S. ; Sanchez, C....
physica status solidi (a). 214 (2017) 8 - p. 1600842 , 2017

Link: https://doi.org/10.1002/..

9

Ultrawide‐Bandgap Semiconductors: Research Opportunities an..:

Tsao, J. Y. ; Chowdhury, S. ; Hollis, M. A....
Advanced Electronic Materials. 4 (2017) 1 - p. , 2017

Link: https://doi.org/10.1002/..

10

Nuclear microprobe investigation of the effects of ionizati..:

Vizkelethy, G. ; King, M.P. ; Aktas, O...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 404 (2017) - p. 264-268 , 2017

Link: https://doi.org/10.1016/..

11

Switching characterization of vertical GaN PiN diodes:

, In: 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),

Matthews, C. ; Flicker, J. ; Kaplar, R.... - p. 135-138 , 2016

Link: https://doi.org/10.1109/..

12

Al0.3Ga0.7N PN diode with breakdown voltage >1600 V:

Allerman, A.A. ; Armstrong, A.M. ; Fischer, A.J....
Electronics Letters. 52 (2016) 15 - p. 1319-1321 , 2016

Link: https://doi.org/10.1049/..

13

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices:

Kaplar, R. J. ; Allerman, A. A. ; Armstrong, A. M....
ECS Journal of Solid State Science and Technology. 6 (2016) 2 - p. Q3061-Q3066 , 2016

Link: https://doi.org/10.1149/..

14

High voltage and high current density vertical GaN power di..:

Armstrong, A.M. ; Allerman, A.A. ; Fischer, A.J....
Electronics Letters. 52 (2016) 13 - p. 1170-1171 , 2016

Link: https://doi.org/10.1049/..

15

Identification of the primary compensating defect level res..:

King, M. P. ; Kaplar, R. J. ; Dickerson, J. R....
Applied Physics Letters. 109 (2016) 18 - p. , 2016

Link: https://doi.org/10.1063/..