E-LIB Suche - Ergebnisse für: Karabeshkin, Konstantin V.

1

Molecular Effect in Damage Formation in β-Ga2O3:

, In: Springer Proceedings in Physics; International Youth Conference on Electronics, Telecommunications and Information Technologies,

Karabeshkin, Konstantin V. ; Struchkov, Andrei I. ; Titov, Andrei I.... - p. 255-262 , 2022

Link: https://doi.org/10.1007/..

2

Comparative Study of Ion-Induced Damage Formation in GaN an..:

, In: Springer Proceedings in Physics; International Youth Conference on Electronics, Telecommunications and Information Technologies,

Karabeshkin, Konstantin V. ; Karaseov, Platon A. ; Struchkov, Andrei I.... - p. 247-253 , 2022

Link: https://doi.org/10.1007/..

3

Impact of Chemical Effects on Topography and Thickness of M..:

, In: Springer Proceedings in Physics; International Youth Conference on Electronics, Telecommunications and Information Technologies,

Struchkov, Andrei I. ; Karabeshkin, Konstantin V. ; Arkhipov, Alexander V.... - p. 151-157 , 2020

Link: https://doi.org/10.1007/..

4

Ion-Beam-Induced Formation of Gold Plasmonic Structures on ..:

, In: 2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech),

Studzinsky, Vitaly M. ; Mishin, Maxim V. ; Karaseov, Platon A... - p. 216-218 , 2020

Link: https://doi.org/10.1109/..

5

Influence of ion irradiation on internal residual stress in..:

Karaseov, Platon A. ; Podsvirov, Oleg A. ; Karabeshkin, Konstantin V....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 268 (2010) 19 - p. 3107-3110 , 2010

Link: https://doi.org/10.1016/..

6

Radiation tolerance of GaN: the balance between radiation-s..:

Titov, A I ; Karabeshkin, K V ; Struchkov, A I..
Journal of Physics D: Applied Physics. 55 (2022) 17 - p. 175103 , 2022

Link: https://doi.org/10.1088/..

7

Formation of Au Nanoparticles and Features of Etching of a ..:

Tuzhilkin, M. S. ; Bespalova, P. G. ; Mishin, M. V....
Semiconductors. 54 (2020) 1 - p. 137-143 , 2020

Link: https://doi.org/10.1134/..

8

Defect Formation under Nitrogen-Ion Implantation and Subseq..:

Sobolev, N. A. ; Sakharov, V. I. ; Serenkov, I. T....
Semiconductors. 53 (2019) 4 - p. 415-418 , 2019

Link: https://doi.org/10.1134/..

9

Do Chemical Effects Affect the Accumulation of Structural D..:

Titov, A. I. ; Karabeshkin, K. V. ; Karaseov, P. A..
Semiconductors. 53 (2019) 11 - p. 1415-1418 , 2019

Link: https://doi.org/10.1134/..

10

Effect of monatomic and molecular ion irradiation on time r..:

Titov, A.I. ; Karaseov, P.A. ; Karabeshkin, K.V...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 458 (2019) - p. 164-168 , 2019

Link: https://doi.org/10.1016/..

11

The Effect of Dose of Nitrogen-Ion Implantation on the Conc..:

Sobolev, N. A. ; Ber, B. Ya. ; Kazantsev, D. Yu....
Technical Physics Letters. 44 (2018) 7 - p. 574-576 , 2018

Link: https://doi.org/10.1134/..

12

Defect Structure of GaAs Layers Implanted with Nitrogen Ion:

Sobolev, N. A. ; Kalyadin, A. E. ; Karabeshkin, K. V....
Technical Physics Letters. 44 (2018) 9 - p. 817-819 , 2018

Link: https://doi.org/10.1134/..

13

Ranges of 10–350keV H and H 2ions in (111) diamond:

Popov, V.P. ; Ilnitskii, M.A. ; Pokhil, G.P....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 406 (2017) - p. 634-637 , 2017

Link: https://doi.org/10.1016/..

14

Effect of the implantation dose and annealing time on the l..:

Sobolev, N. A. ; Kalyadin, A. E. ; Aruev, P. N....
Physics of the Solid State. 58 (2016) 12 - p. 2499-2502 , 2016

Link: https://doi.org/10.1134/..

15

Experimental study and MD simulation of damage formation in..:

Karaseov, P.A. ; Karabeshkin, K.V. ; Mongo, E.E....
Vacuum. 129 (2016) - p. 166-169 , 2016

Link: https://doi.org/10.1016/..