E-LIB Suche - Ergebnisse für: Karatsori, T.A.

1

Threshold voltage of p-type triple-gate junctionless transi..:

Oproglidis, T.A. ; Tassis, D.H. ; Tsormpatzoglou, A....
Solid-State Electronics. 197 (2022) - p. 108451 , 2022

Link: https://doi.org/10.1016/..

2

Novel on-resistance based methodology for MOSFET electrical..:

Karatsori, T.A. ; Bennamane, K. ; Ghibaudo, G.
Solid-State Electronics. 168 (2020) - p. 107722 , 2020

Link: https://doi.org/10.1016/..

3

Low temperature high voltage analog devices in a 3D sequent..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),

Cavalcante, C. ; Garros, X. ; Batude, P.... - p. 155-156 , 2020

Link: https://doi.org/10.1109/..

4

Statistical Characterization and Modelling of Gate-Induced ..:

, In: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S),

Karatsori, T. A. ; Cavalcante, C. ; Lacord, J.... - p. 1-2 , 2019

Link: https://doi.org/10.1109/..

5

New Methodology for Series-Resistance-Immune MOSFET Paramet..:

, In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),

Karatsori, T. A. ; Bennamane, K. ; Ghibaudo, G. - p. 1-4 , 2019

Link: https://doi.org/10.1109/..

6

Static and low frequency noise characterization of ultra-th..:

Karatsori, T.A. ; Pastorek, M. ; Theodorou, C.G....
Solid-State Electronics. 143 (2018) - p. 56-61 , 2018

Link: https://doi.org/10.1016/..

7

Static and Low Frequency Noise Characterization of InGaAs M..:

, In: 2018 48th European Solid-State Device Research Conference (ESSDERC),

Karatsori, T. A. ; Bennamane, K. ; Theodorou, C. G.... - p. 166-169 , 2018

Link: https://doi.org/10.1109/..

8

Compact modeling of nanoscale triple-gate junctionless tran..:

Oproglidis, T.A. ; Karatsori, T.A. ; Barraud, S...
Solid-State Electronics. 142 (2018) - p. 25-30 , 2018

Link: https://doi.org/10.1016/..

9

Leakage current conduction in metal gate junctionless nanow..:

Oproglidis, T.A. ; Karatsori, T.A. ; Barraud, S...
Solid-State Electronics. 131 (2017) - p. 20-23 , 2017

Link: https://doi.org/10.1016/..

10

Drain current local variability from linear to saturation r..:

Karatsori, T.A. ; Theodorou, C.G. ; Haendler, S...
Solid-State Electronics. 128 (2017) - p. 31-36 , 2017

Link: https://doi.org/10.1016/..

11

Hot carrier degradation modeling of short-channel n-FinFETs..:

Messaris, I. ; Karatsori, T.A. ; Fasarakis, N....
Microelectronics Reliability. 56 (2016) - p. 10-16 , 2016

Link: https://doi.org/10.1016/..

12

Hot-carrier degradation model for nanoscale ultra-thin body..:

Karatsori, T.A. ; Theodorou, C.G. ; Haendler, S....
Microelectronic Engineering. 159 (2016) - p. 9-16 , 2016

Link: https://doi.org/10.1016/..

13

Influence of AC signal oscillator level on effective mobili..:

Karatsori, T.A. ; Theodorou, C.G. ; Dimitriadis, C.A..
Electronics Letters. 52 (2016) 17 - p. 1492-1493 , 2016

Link: https://doi.org/10.1049/..

14

Full gate voltage range Lambert-function based methodology ..:

Karatsori, T.A. ; Theodorou, C.G. ; Ioannidis, E.G....
Solid-State Electronics. 111 (2015) - p. 123-128 , 2015

Link: https://doi.org/10.1016/..

15

Threshold voltage of p-type triple-gate junctionless transi..:

Oproglidis, T.A ; Tassis, D.H ; Tsormpatzoglou, A...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2022.108451. , 2022

Link: https://hal.science/hal-..