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Kasu, Makoto
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1

Microgrooves with low-index facets in halide vapor deposite..:

Kasu, Makoto ; Otsubo, Yuto ; Sdoeung, Sayleap...
Applied Physics Express.  17 (2024)  7 - p. 071004 , 2024
Link: https://doi.org/10.35848..
 
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2

1651-V All-Ion-Implanted Schottky Barrier Diode on Heteroep..:

Saha, Niloy Chandra ; Irie, Yuya ; Seki, Yuhei...
IEEE Electron Device Letters.  44 (2023)  2 - p. 293-296 , 2023
Link: https://doi.org/10.1109/..
 
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3

Observation of comet-shaped defect as killer defect in hali..:

Sdoeung, Sayleap ; Sasaki, Kohei ; Kawasaki, Katsumi...
Japanese Journal of Applied Physics.  62 (2023)  7 - p. 071001 , 2023
Link: https://doi.org/10.35848..
 
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4

Long Stress (190 h) Operation of NO2 p-Type Doped Diamond M..:

Saha, Niloy Chandra ; Shiratsuchi, Tomoki ; Kim, Seong-Woo...
IEEE Electron Device Letters.  44 (2023)  6 - p. 975-978 , 2023
Link: https://doi.org/10.1109/..
 
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5

The improvement of Schottky barrier diodes fabricated only ..:

Seki, Yuhei ; Chandra Saha, Niloy ; Shigematsu, Seiya...
Japanese Journal of Applied Physics.  62 (2023)  4 - p. 040902 , 2023
Link: https://doi.org/10.35848..
 
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6

Killer defect responsible for reverse leakage current in ha..:

Sdoeung, Sayleap ; Otsubo, Yuto ; Sasaki, Kohei..
Applied Physics Letters.  123 (2023)  12 - p. , 2023
Link: https://doi.org/10.1063/..
 
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7

3659-V NO₂ p-Type Doped Diamond MOSFETs on Misoriented Hete..:

Saha, Niloy Chandra ; Kim, Seong-Woo ; Koyama, Koji..
IEEE Electron Device Letters.  44 (2023)  1 - p. 112-115 , 2023
Link: https://doi.org/10.1109/..
 
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8

Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diam..:

Saha, Niloy Chandra ; Shiratsuchi, Tomoki ; Oishi, Toshiyuki.
IEEE Electron Device Letters.  44 (2023)  10 - p. 1704-1707 , 2023
Link: https://doi.org/10.1109/..
 
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9

Characterization of dislocation of halide vapor phase epita..:

Sdoeung, Sayleap ; Sasaki, Kohei ; Kawasaki, Katsumi...
Japanese Journal of Applied Physics.  62 (2023)  SF - p. SF1001 , 2023
Link: https://doi.org/10.35848..
 
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10

Fast Switching NO₂-Doped p-Channel Diamond MOSFETs:

Saha, Niloy Chandra ; Shiratsuchi, Tomoki ; Kim, Seong-Woo...
IEEE Electron Device Letters.  44 (2023)  5 - p. 793-796 , 2023
Link: https://doi.org/10.1109/..
 
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11

Structural characterization of defects in EFG- and HVPE-gro..:

Ueda, Osamu ; Kasu, Makoto ; Yamaguchi, Hirotaka
Japanese Journal of Applied Physics.  , 2022
Link: https://doi.org/10.35848..
 
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12

Line-shaped defects: Origin of leakage current in halide va..:

Sdoeung, Sayleap ; Sasaki, Kohei ; Kawasaki, Katsumi...
Applied Physics Letters.  120 (2022)  12 - p. , 2022
Link: https://doi.org/10.1063/..
 
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13

High crystal quality of vertical Bridgman and edge-defined ..:

Chaman, Muhidul Islam ; Hoshikawa, Keigo ; Sdoeung, Sayleap.
Japanese Journal of Applied Physics.  61 (2022)  5 - p. 055501 , 2022
Link: https://doi.org/10.35848..
 
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14

Growth of high-quality inch-diameter heteroepitaxial diamon..:

Kasu, Makoto ; Takaya, Ryota ; Kim, Seong-Woo
Diamond and Related Materials.  126 (2022)  - p. 109086 , 2022
Link: https://doi.org/10.1016/..
 
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15

3326-V Modulation-Doped Diamond MOSFETs:

Saha, Niloy Chandra ; Kim, Seong-Woo ; Oishi, Toshiyuki.
IEEE Electron Device Letters.  43 (2022)  8 - p. 1303-1306 , 2022
Link: https://doi.org/10.1109/..
 
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