Kato, Tomohisa
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4

Surface recombination velocities for 4H–SiC: Dependence of ..:

Kato, Masashi ; Ogawa, Ayato ; Han, Lei.
Materials Science in Semiconductor Processing.  170 (2024)  - p. 107980 , 2024
 
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6

10 kV SiC thyristor for High Voltage Pulsed Power Generator:

, In: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC),
Nakayama, Koji ; Tanaka, Yasunori ; Kato, Tomohisa... - p. 187-193 , 2023
 
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7

Comparison of temperature-dependent resistivity of heavily ..:

Hidaka, Atsuki ; Kondo, Yuki ; Takeshita, Akinobu...
Japanese Journal of Applied Physics.  62 (2023)  10 - p. 101001 , 2023
 
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8

Comparative Study of Performance of SiC SJ-MOSFETs Formed b..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Sometani, Mitsuru ; Oozono, Kunihide ; Ji, Shiyang... - p. 337-340 , 2022
 
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11

Photoluminescence wavelength from stacking fault with compl..:

Suo, Hiromasa ; Yamashita, Tamotsu ; Eto, Kazuma...
Japanese Journal of Applied Physics.  61 (2022)  10 - p. 105502 , 2022
 
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12

Cooperative Reaction of Hydrogen-Networked Water Molecules ..:

Morishita, Tetsuya ; Kayanuma, Megumi ; Nakamura, Takenobu.
The Journal of Physical Chemistry C.  126 (2022)  30 - p. 12441-12449 , 2022
 
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15

Mapping the hotspots for DNA repair synthesis in human brai..:

Kato, Tomohisa ; Muotri, Alysson R.
Cell Death & Differentiation.  28 (2021)  11 - p. 3193-3195 , 2021
 
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