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Katsuyama, Tsukuru
14  results:
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1

Photocapacitance characterization of deep levels in InGaAs/..:

Balasekaran, Sundararajan ; Inada, Hiroshi ; Iguchi, Yasuhiro..
Infrared Physics & Technology.  88 (2018)  - p. 194-199 , 2018
Link: https://doi.org/10.1016/..
 
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2

Highly-Sensitive Near-Infrared Spectroscopy System for Remo..:

Shutoko Engineering Co., Ltd. 3-10-11 Toranomon, Minato-ku, Tokyo 205-0001, Japan ; Tsuno, Kazuhiro ; Akahori, Yutaka...
Journal of Disaster Research.  12 (2017)  3 - p. 536-545 , 2017
Link: https://doi.org/10.20965..
 
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3

Novel Vertical Heterojunction Field-Effect Transistors with..:

Okada, Masaya ; Saitoh, Yu ; Yokoyama, Mitsunori...
Applied Physics Express.  3 (2010)  5 - p. 054201 , 2010
Link: https://doi.org/10.1143/..
 
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4

Electroabsorption Effect of GaInNAs in Waveguiding Structur:

Hashimoto, Jun-ichi ; Koyama, Kenji ; Ishizuka, Takashi...
Japanese Journal of Applied Physics.  48 (2009)  12 - p. 122403 , 2009
Link: https://doi.org/10.1143/..
 
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5

Optical properties of GaInNAs quantum wells on misoriented ..:

Ishizuka, Takashi ; Doi, Hideyuki ; Katsuyama, Tsukuru..
Journal of Crystal Growth.  298 (2007)  - p. 116-120 , 2007
Link: https://doi.org/10.1016/..
 
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6

1.3 µm GaInNAs Bandgap Difference Confinement Semiconductor..:

Hashimoto, Jun-ichi ; Koyama, Kenji ; Katsuyama, Tsukuru...
Japanese Journal of Applied Physics.  45 (2006)  3R - p. 1635 , 2006
Link: https://doi.org/10.1143/..
 
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7

1.3 µm Traveling-Wave GaInNAs Semiconductor Optical Amplifi..:

Hashimoto, Jun-ichi ; Koyama, Kenji ; Katsuyama, Tsukuru...
Japanese Journal of Applied Physics.  43 (2004)  6R - p. 3419 , 2004
Link: https://doi.org/10.1143/..
 
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8

Considerable improvement of optical property of GaInNAs/GaA..:

Ishizuka, Takashi ; Yamada, Takashi ; Iguchi, Yasuhiro...
Journal of Crystal Growth.  272 (2004)  1-4 - p. 760-764 , 2004
Link: https://doi.org/10.1016/..
 
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9

Low-Damage Indium Phosphide Sidewall Formation by Reactive ..:

Saga, Nobuhiro ; Masuda, Takeyoshi ; Kishi, Takeshi...
Japanese Journal of Applied Physics.  41 (2002)  Part 1, No. 2B - p. 1072-1075 , 2002
Link: https://doi.org/10.1143/..
 
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10

Surface Treatment by Ar Plasma Irradiation in Electron Cycl..:

Hashimoto, Jun-ichi ; Ikoma, Nobuyuki ; Murata, Michio...
Japanese Journal of Applied Physics.  39 (2000)  5R - p. 2761 , 2000
Link: https://doi.org/10.1143/..
 
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11

Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Te..:

Moto, Akihiro ; Tanaka, So ; Ikoma, Nobuyuki...
Japanese Journal of Applied Physics.  38 (1999)  2S - p. 1015 , 1999
Link: https://doi.org/10.1143/..
 
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12

Closely Spaced Independently Addressable Dual-Beam Visible ..:

Yoshida, Ichiro ; Katsuyama, Tsukuru ; Hashimoto, Jun-ichi.
Japanese Journal of Applied Physics.  34 (1995)  9R - p. 4803 , 1995
Link: https://doi.org/10.1143/..
 
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13

Improvement of photoluminescence characteristics of AlGaInP..:

Yoshida, Ichiro ; Katsuyama, Tsukuru ; Hayashi, Hideki
Journal of Crystal Growth.  115 (1991)  1-4 - p. 533-537 , 1991
Link: https://doi.org/10.1016/..
 
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14

Effects of strained-layer structures on the threshold curre..:

Hashimoto, Jun-ichi ; Katsuyama, Tsukuru ; Shinkai, Jiro..
Applied Physics Letters.  58 (1991)  9 - p. 879-880 , 1991
Link: https://doi.org/10.1063/..
 
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